Patents Assigned to Industrial Technology Research Institute a corporation of Taiwan
  • Substrate-biased silicon diode for electrostatic discharge protection and fabrication method
    Publication number: 20040119119
    Abstract: An integrated circuit device that includes a semiconductor substrate, a well region formed inside the semiconductor substrate, a first isolation structure formed inside the well region, a second isolation structure formed inside the well region and spaced apart from the first isolation structure, a dielectric layer formed over the well region, and a layer of silicon, formed over the dielectric layer, including a p-type portion, an n-type portion and a center portion disposed between the p-type and n-type portions.
    Type: Application
    Filed: November 7, 2003
    Publication date: June 24, 2004
    Applicant: Industrial Technology Research Institute, a corporation of Taiwan
    Inventors: Chyh-Yih Chang, Ming-Dou Ker
  • Substrate-biased silicon diode for electrostatic discharge protection and fabrication method
    Publication number: 20020098631
    Abstract: An integrated circuit device that includes a semiconductor substrate, a well region formed inside the semiconductor substrate, a first isolation structure formed inside the well region, a second isolation structure formed inside the well region and spaced apart from the first isolation structure, a dielectric layer formed over the well region, and a layer of silicon, formed over the dielectric layer, including a p-type portion, an n-type portion and a center portion disposed between the p-type and n-type portions.
    Type: Application
    Filed: March 7, 2002
    Publication date: July 25, 2002
    Applicant: Industrial Technology Research Institute a corporation of Taiwan
    Inventors: Chyh-Yih Chang, Ming-Dou Ker