Abstract: A visible light communication system, and a method of modulating data and a method of feeding back performance information in the system, are provided. In the system, a transmitting unit modulates a plurality of data on a plurality of LED channels basis that are formed by a plurality of LEDs, respectively, and transmits the modulated data into a corresponding light signal. A receiving unit receives a light signal that is transmitted from the transmitting unit to demodulate the received light signal to a signal on a plurality of LED channels basis.

Abstract: Disclosed is a thin film transistor that includes a gate electrode, a semiconductor overlapping with the gate electrode, a source electrode that is electrically connected to the semiconductor, a drain electrode that is electrically connected to the semiconductor and faces the source electrode, and a stacked gate insulating layer that is positioned between the gate electrode and semiconductor. The stacked gate insulating layer includes an aluminum oxide layer. A method of manufacturing the same and a display device including the thin film transistor are also disclosed.

Abstract: In the hybrid automatic repeat request (H-ARQ) supporting method for cooperative transmission, a receiver selects one H-ARQ repeat method from among the chase combining method and the incremental redundancy method according to the SNR when the data packet cooperatively transmitted by transmitters generates an error. Also, the method for the receiver to select a repeat transmitter includes a method for selecting a repeat transmitter in advance, a method for removing a transmitting node from a repeat transmitter group when the SNR of the transmitting node is low, and a method for estimating the SNR of each transmitter for each predetermined time frame and selecting the transmitter having the greatest SNR as the repeat transmitter.

Abstract: Disclosed is a thin film transistor that includes a gate electrode, a semiconductor overlapping with the gate electrode, a source electrode that is electrically connected to the semiconductor, a drain electrode that is electrically connected to the semiconductor and faces the source electrode, and a stacked gate insulating layer that is positioned between the gate electrode and semiconductor. The stacked gate insulating layer includes an aluminum oxide layer. A method of manufacturing the same and a display device including the thin film transistor are also disclosed.