Abstract: Proposed are a DNP3.0-DDS gateway and a data transfer method using the same. The DNP3.0-DDS gateway includes a DNP3.0 master including a first mapping module which extracts DNP3.0 object data, generates the extracted object data as an IPC PDU and transfers the IPC PDU, and a DDS publisher including a second mapping module which receives the IPC PDU from the DNP3.0 master and maps an extracted IPC PDU value to a DDS data type. According to the DNP3.0-DDS gateway and the data transfer method using the same, by converting a system of a P3.0 server/client format into a DDS publish-subscribe format in real time, it is possible to prevent the overload phenomenon of a server when a plurality of clients request data information, and thus, real-time data processing is made possible with high reliability.

Abstract: Proposed are a DNP3.0-DDS gateway and a data transfer method using the same. The DNP3.0-DDS gateway includes a DNP3.0 master including a first mapping module which extracts DNP3.0 object data, generates the extracted object data as an IPC PDU and transfers the IPC PDU, and a DDS publisher including a second mapping module which receives the IPC PDU from the DNP3.0 master and maps an extracted IPC PDU value to a DDS data type. According to the DNP3.0-DDS gateway and the data transfer method using the same, by converting a system of a P3.0 server/client format into a DDS publish-subscribe format in real time, it is possible to prevent the overload phenomenon of a server when a plurality of clients request data information, and thus, real-time data processing is made possible with high reliability.

Abstract: Disclosed is a method of forming a wiring pattern using nano-ink, including providing a mixture solution of at least one first metal selected from the group consisting of gold, silver, and copper and at least one second metal selected from the group consisting of lead, zinc, tin, indium, cadmium, gallium, and alloys thereof, having an average particle size ranging from 5 nm to 1 ?m in a reducing atmosphere; forming a wiring pattern on a base layer using the mixture solution; and thermally treating the wiring pattern at 150˜300° C. in a reducing atmosphere. Even when metal having low electrical conductivity is used, a wiring pattern having high electrical conductivity can be formed. The use of the second metal having a low melting point enables thermal treatment at low temperatures, thus preventing damage to a base layer on which a wiring pattern is formed and preventing a reaction between the metal and the base layer.