Patents Assigned to Indystry-Academic Cooperation Foundation, Yonsei University
  • Methods of forming oxide thin film and electrical devices and thin film transistors using the methods
    Patent number: 9362116
    Abstract: Provided are a method of forming an oxide thin film and an electrical device and thin film transistor using the method. The method includes forming an oxide thin film on a substrate by applying a precursor solution; and performing a thermal treatment process on the substrate under a pressurized atmosphere using a gas at about 100° C. to about 400° C.
    Type: Grant
    Filed: November 22, 2011
    Date of Patent: June 7, 2016
    Assignee: Indystry-Academic Cooperation Foundation, Yonsei University
    Inventors: Hyun Jae Kim, Hyun Soo Shin, You Seung Rim