Patents Assigned to Infineon Tech. Inc.
  • Method for improving global planarization uniformity of a silicon nitride layer used in the formation of trenches by using a sandwich stop layer
    Patent number: 6187650
    Abstract: A method of forming a planar silicon nitride layer is disclosed. The method comprises: forming a pad oxide layer; forming a first nitride layer on the pad oxide layer; forming a stop layer on the first nitride layer; forming a second nitride layer on the stop layer; performing intermediate processes that damage the second nitride layer; removing the second nitride layer; removing the stop layer such that the first nitride layer remains as the planar silicon nitride layer.
    Type: Grant
    Filed: November 5, 1999
    Date of Patent: February 13, 2001
    Assignees: ProMOS Tech., Inc., Mosel Vitelic Inc., Infineon Tech. Inc.
    Inventors: Joseph Wu, Sheng-Fen Chiu, J. S. Shiao