Abstract: A method for forming a semiconductor device includes forming a first insulation layer on a semiconductor substrate and forming a structured etch stop layer. Further, the method includes depositing a second insulation layer after forming the structured etch stop layer and forming a structured mask layer on the second insulation layer. Additionally, the method includes etching portions of the second insulation layer uncovered by the structured mask layer and portions of the first insulation layer uncovered by the structured etch stop layer to uncover at least one of a portion of the semiconductor substrate and an electrode located within a trench. Further, the method includes depositing electrically conductive material to form an electrical contact to at least one of the uncovered electrode and the uncovered portion of the semiconductor substrate.

Abstract: A super junction semiconductor device includes a super junction structure and a channel stopper structure. The super junction structure includes first and second areas alternately arranged along a first lateral direction and extending in parallel along a second lateral direction. Each one of the first areas includes a first semiconductor region of a first conductivity type. Each one of the second areas includes, along the first lateral direction, an inner area between opposite second semiconductor regions of a second conductivity type opposite to the first conductivity type. The channel stopper structure includes a doped semiconductor region electrically coupled to a field plate. The second semiconductor regions extend along the second lateral direction from the transistor cell area through the edge termination area overlap with the field plate.