Abstract: A power circuit is described that includes a half-bridge and a driver for controlling a first switch of the half-bridge. The driver is configured to cause the first switch to transition between operating in an on-state of the first switch and an off-state of the first switch based at least in part on a driver signal and a voltage at the half-bridge.
Abstract: Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.
Type:
Grant
Filed:
August 31, 2006
Date of Patent:
August 2, 2011
Assignee:
Infineon Technologies Autria AG
Inventors:
Hans-Joachim Schulze, Frank Pfirsch, Stephan Voss, Franz-Josef Niedernostheide