Patents Assigned to Infineon Technologies Autria AG
  • Publication number: 20150091539
    Abstract: A power circuit is described that includes a half-bridge and a driver for controlling a first switch of the half-bridge. The driver is configured to cause the first switch to transition between operating in an on-state of the first switch and an off-state of the first switch based at least in part on a driver signal and a voltage at the half-bridge.
    Type: Application
    Filed: October 2, 2013
    Publication date: April 2, 2015
    Applicant: Infineon Technologies Autria AG
    Inventor: Karl Norling
  • Patent number: 7989888
    Abstract: Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.
    Type: Grant
    Filed: August 31, 2006
    Date of Patent: August 2, 2011
    Assignee: Infineon Technologies Autria AG
    Inventors: Hans-Joachim Schulze, Frank Pfirsch, Stephan Voss, Franz-Josef Niedernostheide