Abstract: A method of operating an electronic device includes storing a first plurality of bits of digital information in a memory using a first number of memory cells in parallel. The first plurality of bits of digital information are for operating the device when operating parameters are not within a nominal range. The method also includes storing a second plurality of bits of digital information in the memory using a second number of memory cells in parallel. The second plurality of bits of digital information are for operating the device when operating parameters are within a nominal range.

Abstract: A method is provided for programming a block of memory cells of a non-volatile memory device. A first group of memory cells of the block of memory cells is selected. At least one programming pulse is programmed into all memory cells of the first group. A threshold level is detected for each one of the memory cells of the first group only. The first group of memory cells is verified by comparing each one of the detected threshold levels with predefined target levels provided for each one of the first group of memory cells.

Abstract: A method adapts circuit components of a memory module to changing operating conditions within a predefined range. According to one embodiment, a memory module provides a sensor arrangement and a communication bus. Sub-ranges are defined for at least one operating condition, in which the circuit components can work with a fixed setup. During operation, the current state of the at least one operating condition is sensed using the sensing arrangement. The sensed state of the operating condition is mapped to one of the predefined ranges and an associated set of control signals is transmitted over the communication bus. The control signals transmitted over the communication bus are used to adapt at least one circuit component to the current operating conditions.

Abstract: A memory device architecture having improved bitline pre-charge and wordline timing operations includes a pre-charge driver, a pre-charge line, a timing controller, a wordline driver, and a wordline coupled to a selected memory cell. The pre-charge driver is operable to supply a pre-charge signal to a pre-charge line when activated by the pre-charge triggering signal. The pre-charge line is operable to supply a pre-charge output signal. The timing controller is coupled to receive the pre-charge output signal, and based thereon, provide a wordline triggering signal. The wordline triggering signal is supplied to the wordline driver, which applies a wordline signal to the selected memory cell.

Abstract: A processing arrangement (1) includes a processing unit (3) adapted to execute a predetermined set of processing instructions received from an instruction input (12). The set of processing instructions includes at least one predetermined processing instruction adapted to initiate a fixing operation. A memory unit (2) with a multiplicity of memory cells (5) is adapted to store data values. A detection unit (6) is adapted to detect a data value of a memory cell (5) and a data output (7) adapted to provide, on successful detection, the detected data value of a memory cell (5) or, on unsuccessful detection, a predetermined data value to the data output (7). The data output (7) is operationally coupled to the instruction input (12). The predetermined data value is mapped to the predetermined processing instruction adapted to initiate the fixing operation of an execution through the processing unit (3).

Abstract: An integrated memory device includes an array of memory cells for storing data, a memory cell selector operationally connected to the array for selecting at least one memory cell of the array, a data interface adapted to store data provided to the data interface in a selected memory cell and to provide data stored in a selected memory cell to the data interface for retrieval, and a control circuit operationally connected to the memory cell selector and the data interface.

Abstract: A memory layer sequence comprising a lower confinement layer (2), a charge-trapping layer (3), and an upper confinement layer (4) is applied on the main surface of a silicon substrate (1). By a photolithography step, trenches running parallel at a distance from one another are etched to delimitate the active area. A trench filling (7) is applied by growth or deposition of dielectric material or by a selective oxidation of the substrate material. After the removal of the charge-trapping layer sequence in a peripheral area and the deposition of a gate dielectric material provided for the transistors of an addressing circuitry, wordline stacks (8) are formed.

Abstract: A semiconductor memory device (M) includes a memory array (MA) having a plurality of memory cells, a redundancy array (RA) having a plurality of memory cells, a non-volatile redundancy information memory (NVR) having a plurality of memory cells for storing redundancy information, and a redundancy control unit (RU) for selecting either memory cells in the memory array (MA) or memory cells in the redundancy array (RA). In one example, the non-volatile redundancy information memory (NVR) is connected directly to the redundancy control unit (RU) by means of at least one sense amplifier (SA).

Abstract: A non-volatile memory card is described, which comprises a chronometer powered by an autarkic, card-internal power supply with a long-term energy store. The chronometer is connected to a card internal controller, such that the chronometer can provide the current time to the controller independent of a host system.

Abstract: An integrated circuit comprises a control unit, a plurality of control inputs for the provision of control signals to said control unit and a deactivation circuit for disabling the provision of at least one of said control signals. After reception of a first coded message by said integrated circuit the provision of at least one of said control signals to the control unit can be disabled by said deactivation circuit.

Abstract: Embodiments of the invention relate to non-volatile memory devices and their methods of manufacture. Embodiments comprise an array of non-volatile memory cells, the array comprising a multiplicity of array columns having at least one redundant column of non-volatile memory cells adapted to replace a defective array column, a column decoder, and a column redundancy unit. The column decoder is adapted to receive an address of a memory cell to which data is to be written or from which data is to be read. The column redundancy unit is adapted to decide whether the decoded address is to be written to or read from an array from or a redundant column. The data required by the column redundancy unit is stored in a column redundancy memory, which is connected to the column redundancy unit by means of a dedicated column redundancy bus.

Abstract: A method includes an initial process of selecting a memory cell within the memory array and an operating condition under which the memory cell is to be tested. The memory cell is tested under the specified operating condition, and a measured response obtained therefrom. Based upon the measured response, a determination is made as to whether the memory cell passes or fails a predetermined criterion. The pass/fail result is communicated to a counter that is integrated on-chip with the memory array, the counter operable to accumulate a total number of pass or fail results supplied thereto. The aforementioned processes are repeated for at least one different memory cell, whereby the new memory cell is tested under the aforementioned operating conditions. Subsequently, a data value representing the accumulated number of pass or fail results is output from the on-chip counter.

Abstract: A voltage generator circuit provides an output voltage that is higher than an input voltage. The voltage generator circuit includes an input terminal receiving the input voltage, and an output terminal providing the output voltage. A pre-charge element is coupled between the input terminal and the output terminal, and a capacitance circuit is coupled to the input terminal and to the output terminal.

Abstract: A method for column redundancy re-use includes arranging the memory array into a plurality of addressable first array columns and a plurality of addressable second array columns. The column redundancy structure is also arranged into an addressable first redundancy column and an addressable second redundancy column. A first column array which is found to be defective is replaced by mapping its address to the first redundancy column. In a similar manner, a second column array which is found to be defective is replaced by mapping its address to the second redundancy column.

Abstract: A leadframe includes a multiplicity of leads. The leads have a board level contact portion, an intermediate portion and a chip level contact portion. The intermediate portion is disposed between the board level contact portion and the chip level contact portion. The board level contact portions extend from one of the first side or the second side of the semiconductor device along a second direction. The chip level contact portions extend along the first direction. Ends of the chip level contact portions are aligned along a line extending along the second direction. This leadframe can be included with a semiconductor chip in a packaged integrated circuit.

Abstract: A semiconductor device is fabricated by forming a trench in a semiconductor body. A region of dielectric material is formed within at least a lower portion of the trench. An upper portion of the semiconductor body is doped. A cutout is formed in the semiconductor material such that a vertical strip of semiconductor material remains along a sidewall of the dielectric material. A lower portion of the semiconductor body adjacent the sidewall of the dielectric material is doped. A gate dielectric layer is formed over the vertical strip of semiconductor material and a gate electrode is arranged in the cutout.

Abstract: A memory device (1) includes a memory array (2). The memory array (2) has at least one memory area (5) that includes a plurality of conductive lines (3) and a plurality of memory cells (4) connected to the conductive lines (3). The conductive lines (3) are arranged at positions (n) within the memory area (5). The memory cells (4) are erasable and are programmable by application of an electrical programming pulse (P) supplied via a respective conductive line (3). The memory device (1) is constructed such that for programming of a memory cell (4) an electrical programming pulse (P) is applied which has a programming pulse profile (PP) depending on the position (n) of a respective conductive line (3) to which the memory cell (4) is connected.

Abstract: A trench (2) is fabricated in a silicon body (1). The walls (4) of the trench are provided with a nitrogen implantation (6). An oxide layer between the source/drain regions (5) and a word line applied on the top side grows to a greater thickness than a lower oxide layer of an ONO storage layer fabricated as gate dielectric at the trench wall. Instead of the nitrogen implantation into the trench walls, it is possible to fabricate a metal silicide layer on the top sides of the source/drain regions in order to accelerate the oxide growth there.

Abstract: A semiconductor memory device comprises a wordline (40), a first bitline (21a), two second bitlines (22a, 22b), a first memory cell (100a) and a second memory cell (100b). The first memory cell (100a) is coupled to the wordline (40), one of the second bitlines (22a) and the first bitline (21a). The second memory cell (100b) is coupled to the wordline (40), the other second bitline (22b) and the first bitline (21a). Each memory cell (100a, 100b) stores a first bit (101) and a second bit (102). The semiconductor device further comprises a programming unit (2) coupled to the wordline (40) and the first and the second bitlines (21a, 22a, 22b).

Abstract: A memory device comprises a memory cell array (1) with a multitude of memory cells (111). Each of the memory cells (111) is assigned to one of a multitude of blocks (15). Each memory cell (111) is accessible by an access signal in order to alter stored information. Each of the memory cells (111) is assigned to one of a multitude of blocks (15). The memory device further comprises a measuring unit (100) coupled to the memory cell array (1) and being operable to identify a selected access characteristic of each of the memory cells (11) and an assignment unit (150) which is coupled to the measuring unit (100) and is operable to assign a performance parameter (215) to each block (15). A performance memory unit (2) is adapted to contain the performance parameters (215) assigned to the blocks (15).