Abstract: A semiconductor component and a method for producing a semiconductor component are described. The semiconductor component includes a semiconductor body including an inner zone and an edge zone, and a passivation layer, which is arranged at least on a surface of the semiconductor body adjoining the edge zone. The passivation layer includes a semiconductor oxide and that includes a defect region having crystal defects that serve as getter centers for contaminations.
Type:
Grant
Filed:
September 15, 2014
Date of Patent:
November 3, 2015
Assignee:
Infineon Technologoies AG
Inventors:
Hans-Joachim Schulze, Manfred Pfaffenlehner, Markus Schmitt