Patents Assigned to Infineon Technologoies AG
  • Patent number: 9177829
    Abstract: A semiconductor component and a method for producing a semiconductor component are described. The semiconductor component includes a semiconductor body including an inner zone and an edge zone, and a passivation layer, which is arranged at least on a surface of the semiconductor body adjoining the edge zone. The passivation layer includes a semiconductor oxide and that includes a defect region having crystal defects that serve as getter centers for contaminations.
    Type: Grant
    Filed: September 15, 2014
    Date of Patent: November 3, 2015
    Assignee: Infineon Technologoies AG
    Inventors: Hans-Joachim Schulze, Manfred Pfaffenlehner, Markus Schmitt