Abstract: In a method of forming a microelectronic structure of a Pt/BSTO/Pt capacitor stack for use in a DRAM device, the improvement comprising substantially eliminating or preventing oxygen out-diffusion from the BSTO material layer, comprising:
a) preparing a bottom Pt electrode formation;
b) subjecting the bottom Pt electrode formation to an oxygen plasma treatment to form an oxygen enriched Pt layer on the bottom Pt electrode;
c) depositing a BSTO layer on said oxygen enriched Pt layer;
d) depositing an upper Pt electrode layer on the BSTO layer;
e) subjecting the upper Pt electrode layer to an oxygen plasma treatment to form an oxygen incorporated Pt layer; and
f) depositing a Pt layer on the oxygen incorporated Pt layer upper Pt elect.
Type:
Grant
Filed:
January 21, 2000
Date of Patent:
April 10, 2001
Assignees:
Infineon Technologoies North America Corp., International Business Machines Corp.
Inventors:
Heon Lee, Young-Jin Park, Young Limb, Brian Lee, Kilho Lee, Satish Athavale, Jai-hoon Sim