Abstract: A method for forming a semiconductor device and semiconductor device is disclosed. In one example, the method includes forming a silicone layer on a semiconductor die. The method further includes plasma treating a silicone surface of the silicone layer. A surfactant is deposited on the plasma-treated silicone surface of the silicone layer to obtain a silicone surface at least partly covered by surfactant. A mold is formed on the silicone surface at least partly covered by surfactant. The surfactant includes surfactant molecules comprising an inorganic skeleton terminated by organic compounds.
Type:
Grant
Filed:
November 14, 2017
Date of Patent:
October 22, 2019
Assignee:
Infineon Teohnologies Austria AG
Inventors:
Joachim Hirschler, Christoffer Erbert, Markus Heinrici, Mathias Plappert, Caterina Travan