Abstract: A via-filling method of a TGV substrate includes steps: filling a plurality of metal balls into a plurality of vias of the TGV substrate; using a heating process to melt the plurality of metal balls to form a liquid-state metal; and cooling down the liquid-state metal to form a solid-state metal inside the plurality of vias. Because the method needn't use solvents or fluxes, the solid-state metal inside the plurality of vias have better electric conductivity.

Abstract: A vertical light emitting diode die packaging method is provided, including a plurality of following steps. At first, a plurality of drill hole is formed in a substrate and a first metal material is used to fill the drill holes. Next, disposing and fixing a plurality of vertical light emitting diode die on the substrate through a second metal material, and a transparent glue is used to cover thereon. A laser process is then employed to dissolve the transparent glue for forming ditches. And, a conductive liquid is applied to fill the ditches and an insulating glue is provided to embrace and encapsulate the vertical light emitting diode dies. By employing the packaging method of the present invention, the current external wire bonding process can be effectively replaced, thereby die size miniaturization as well as packaging yield of the vertical light emitting diode dies are believed to be optimized.

Abstract: A bonding and transferring method for die package structures is provided, including providing a die package structure which has a positioning adhesive disposed thereon, and providing a vibration base having at least one cavity corresponding to the positioning adhesive. By alignment of the positioning adhesive and the cavity, the die package structure can be positioned into the vibration base. A target substrate is further provided and bonded with the vibration base having the die package structure disposed thereon through a metal material. And a laser process is then performed to melt the metal material. At last, the vibration base and the positioning adhesive are removed so the die package structure is successfully bonded and transferred onto the target substrate. By employing the proposed process method of the present invention, rapid mass transfer result is accomplished, and the packaging yield of vertical light emitting diode die package structures is optimized.

Abstract: A magnetic light-emitting structure and fabrication method for manufacturing a magnetic light-emitting element are provided. The fabrication method comprises providing a magnetic metal composite substrate, wherein a second metal layer is respectively disposed on an upper and lower surface of a first metal layer; forming a connecting metal layer, an epitaxial layer and a plurality of electrode unit on top; and performing a complex process, which removes the second metal layer on the lower surface of the first metal layer and part of the first metal layer and performs cutting according to the number of the electrode unit, so as to form a plurality of epitaxial die. Each epitaxial die corresponds to an electrode unit to form a magnetic light-emitting element. The proposed method improves soft magnetic properties of an original substrate and enables dies to reverse spontaneously, thereby used perfectly for industrial mass transfer technology.

Abstract: A light-emitting diode packaging structure and a method for fabricating the same is disclosed. A semiconductor wafer is provided, which includes semiconductor substrates. Each semiconductor substrate is penetrated with a first through hole and three second through holes. An insulation layer is formed on the surface of each semiconductor substrate and the inner surfaces of the first through hole, the first sub-through hole, and the second sub-through hole. A patterned electrode layer is formed on the top surface of the semiconductor substrate. A conductive material covering the insulation layer is formed in the first through hole and the second through hole and electrically connected to the patterned electrode layer. Three light-emitting diodes are respectively formed in the first sub-through holes of the second through holes of each semiconductor substrate and respectively electrically connected to the conductive material within the second through holes.

Abstract: A magnetic light-emitting structure and fabrication method for manufacturing a magnetic light-emitting element are provided. The fabrication method comprises providing a magnetic metal composite substrate, wherein a second metal layer is respectively disposed on an upper and lower surface of a first metal layer; forming a connecting metal layer, an epitaxial layer and a plurality of electrode unit on top; and performing a complex process, which removes the second metal layer on the lower surface of the first metal layer and part of the first metal layer and performs cutting according to the number of the electrode unit, so as to form a plurality of epitaxial die. Each epitaxial die corresponds to an electrode unit to form a magnetic light-emitting element. The proposed method improves soft magnetic properties of an original substrate and enables dies to reverse spontaneously, thereby used perfectly for industrial mass transfer technology.

Abstract: An alignment module and alignment method for transferring magnetic light-emitting die are provided, including a backplane having at least one cavity, a magnetic pull device and magnetic light-emitting die. The magnetic pull device is located below the cavity and disposed correspondingly to the cavity. The magnetic light-emitting die includes a magnetic metallic substrate and a peripheral electrode formed on the magnetic metallic substrate. The peripheral electrode is surrounding on the magnetic metallic substrate and formed adjacent to an inner edge of the magnetic metallic substrate. Depth of the cavity is designed as equal to a thickness of the magnetic metallic substrate such that the die is accommodated and aligning transferred to the backplane by using the cavity and magnetic pull device. By employing the proposed die alignment techniques, accurate alignment result is achieved and thereby the present invention is applied perfectly for industrial mass transfer technology.

Abstract: A vertical type light emitting diode die and a method for fabricating the same is disclosed. A growth substrate is provided and an epitaxial layer is formed on the growth substrate. A metallic combined substrate is connected to the epitaxial layer. Then, the growth substrate is removed. Electrode units are formed on the top surface of the epitaxial layer. The epitaxial layer is divided into epitaxial dies according to the number of the plurality of electrode units. Each vertical type light emitting diode die formed in the abovementioned way includes the metallic combined substrate having a first metal layer and second metal layers. The first metal layer is combined with the two second metal layers by cutting, vacuum heating, and polishing, so as to enable the metallic combined substrate to have a high coefficient of thermal conductivity, a low coefficient of thermal expansion, and initial magnetic permeability.

Abstract: A vertical type light emitting diode die and a method for fabricating the same is disclosed. A growth substrate is provided and an epitaxial layer is formed on the growth substrate. A metallic combined substrate is connected to the epitaxial layer. Then, the growth substrate is removed. Electrode units are formed on the top surface of the epitaxial layer. The epitaxial layer is divided into epitaxial dies according to the number of the plurality of electrode units. Each vertical type light emitting diode die formed in the abovementioned way includes the metallic combined substrate having a first metal layer and second metal layers. The first metal layer is combined with the two second metal layers by cutting, vacuum heating, and polishing, so as to enable the metallic combined substrate to have a high coefficient of thermal conductivity, a low coefficient of thermal expansion, and initial magnetic permeability.