Abstract: A chemical-mechanical planarization pad for semiconductor manufacturing is provided. The pad comprises synthetic fibers that are non-crimped fibers which are present in an amount of 1.0% by weight to 98.0% by weight in the mat and wherein the non-crimped fibers have a length of 0.1 cm to 127 cm and a diameter of 1.0 to 1000 micrometers.

Abstract: The present disclosure relates to a process for forming a chemical mechanical planarization pad. The process includes forming a chemical mechanical planarization pad including a polymer matrix and an embedded structure by heating the polymer matrix and the embedded structure at a first temperature T1 and a first pressure P1. The chemical mechanical planarization pad is then allowed to deform at a second temperature T2 and a second pressure P2. The chemical mechanical planarization pad is then compressed at given mold cavity thickness by applying heat at a third temperature T3, wherein T1>T2, P1>P2, T1?T3.

Abstract: The present disclosure is directed at a chemical-mechanical planarization polishing pad comprising interconnecting elements and a polymer filler material, wherein the interconnecting elements include interconnecting junction points that are present at a density of 1 interconnecting junction point/cm3 to 1000 interconnecting junction points/cm3, and wherein the interconnecting elements have a length between interconnection junction points of 0.1 microns to 20 cm.

Abstract: An aspect of the present disclosure relates to a chemical mechanical planarization pad including a first domain and a second continuous domain wherein the first domain includes discrete elements regularly spaced within the second continuous domain. The pad may be formed by forming a plurality of openings for a first domain within a second continuous domain of the pad, wherein the openings are regularly spaced within the second domain, and forming the first domain within the plurality of openings in second continuous domain. In addition, the pad may be used in polishing a substrate with a polishing slurry.

Abstract: The present disclosure relates to a polishing pad. The polishing pad may include a polymer layer having a three-dimensional network therein and a composite layer having the ability to equalize pressure across the pad surface, including a first adhesive wherein the composite exhibits a hydrostatic modulus of 1 to 500 psi when compressed at a pressure of 1 to 50 psi.

Abstract: A chemical-mechanical planarization polishing pad is provided comprising a network of elements dispersed within a polymer, a plurality of voids formed in the pad and at least a portion of said network of elements is connected to at least a portion of the voids. A method of forming the pad is also disclosed, which comprises providing a composition, the composition comprising a network of elements and at least one of a polymer or a reactive prepolymer, introducing a gas to the composition and using the gas to produce a plurality of voids in the composition. A method of forming voids is also disclosed, which relies upon the application of a force to the network of elements within the polymer or reactive polymer, followed by removal of the force and void formation.

Abstract: A polishing pad is provided herein, which may include a plurality of soluble fibers having a diameter in the range of about 5 to 80 micrometers, and an insoluble component. The pad may also pad include a first surface having a plurality of micro-grooves, wherein the soluble fibers form the micro-grooves in the pad. The micro-grooves may have a width and/or depth up to about 150 micrometers. In addition, a method of forming the polishing pad and a method of polishing a surface with the polishing pad is disclosed.

Abstract: The present disclosure relates to a polishing pad including a chemical agent present in an amount sufficient to be released and dissolving into an aqueous abrasive particle polishing medium during chemical mechanical planarization and reducing abrasive particle agglomeration and a binder. The pad includes a surface such that as the pad is abraded the surface is renewed exposing at least a portion of the chemical agent.

Abstract: A method of forming a chemical mechanical polishing pad. The method includes polymerizing one or more polymer precursors and forming a chemical-mechanical planarization pad including a surface, forming grooves in the surface defining lands between the grooves, wherein the grooves have a first width, and shrinking the lands from a first land length (L1) at the surface to a second land length (L2) at the surface, wherein the second land length (L2) is less than the first land length (L1) and the grooves have a second width (W2) wherein (W1)?(X)(W2), wherein (X) has a value in the range of 0.01 to 0.75.

Abstract: A polishing pad is provided herein, which may include a plurality of soluble fibers having a diameter in the range of about 5 to 80 micrometers, and an insoluble component. The pad may also pad include a first surface having a plurality of micro-grooves, wherein the soluble fibers form the micro-grooves in the pad. The micro-grooves may have a width and/or depth up to about 150 micrometers. In addition, a method of forming the polishing pad and a method of polishing a surface with the polishing pad is disclosed.

Abstract: A chemical mechanical polishing pad. The pad includes a surface and a polymer matrix capable of transmitting at least a portion of incident radiation. In addition, at least one embedded structure in the polymer matrix, including a portion of the pad where the embedded structure is not present, and a window integral to the pad defined by the portion of the pad where the embedded structure is not present.

Abstract: A chemical-mechanical planarization pad for semiconductor manufacturing is provided. The pad comprises synthetic fibers that are non-crimped fibers which are present in an amount of 1.0% by weight to 98.0% by weight in the mat and wherein the non-crimped fibers have a length of 0.1 cm to 127 cm and a diameter of 1.0 to 1000 micrometers.

Abstract: The present disclosure relates to a chemical mechanical planarization pad and a method of making and using a chemical mechanical planarization pad. The chemical mechanical planarization pad may include a first component including a water soluble composition and water insoluble composition exhibiting a solubility in water of less than that of the water soluble composition, wherein at least one of the water soluble and water insoluble compositions of the first component is formed of fibers. The chemical mechanical planarization pad may also include a second component, wherein the first component is present as a discrete phase in a continuous of the second component.

Abstract: An aspect of the present disclosure relates to a chemical mechanical planarization pad including a first domain and a second continuous domain wherein the first domain includes discrete elements regularly spaced within the second continuous domain. The pad may be formed by forming a plurality of openings for a first domain within a second continuous domain of the pad, wherein the openings are regularly spaced within the second domain, and forming the first domain within the plurality of openings in second continuous domain. In addition, the pad may be used in polishing a substrate with a polishing slurry.

Abstract: A polishing pad and a method of producing a polishing pad. The method includes providing a mold, having a first cavity and a second cavity, wherein the first cavity defines a recess, providing a polymer matrix material including void forming elements in the recess, forming a polishing pad and removing at least a portion of the elements from the polishing pad forming void spaces within the polishing pad by one of a chemical method or mechanical method, prior to use in chemical/mechanical planarization procedures.

Abstract: A chemical-mechanical planarization polishing pad is provided comprising a network of elements dispersed within a polymer, a plurality of voids formed in the pad and at least a portion of said network of elements is connected to at least a portion of the voids. A method of forming the pad is also disclosed, which comprises providing a composition, the composition comprising a network of elements and at least one of a polymer or a reactive prepolymer, introducing a gas to the composition and using the gas to produce a plurality of voids in the composition. A method of forming voids is also disclosed, which relies upon the application of a force to the network of elements within the polymer or reactive polymer, followed by removal of the force and void formation.

Abstract: The present disclosure relates to a polishing pad. The polishing pad may include a polymer layer having a three-dimensional network therein and a composite layer having the ability to equalize pressure across the pad surface, including a first adhesive wherein the composite exhibits a hydrostatic modulus of 1 to 500 psi when compressed at a pressure of 1 to 50 psi.

Abstract: The present disclosure relates to a polishing pad including a chemical agent present in an amount sufficient to be released and dissolving into an aqueous abrasive particle polishing medium during chemical mechanical planarization and reducing abrasive particle agglomeration and a binder. The pad includes a surface such that as the pad is abraded the surface is renewed exposing at least a portion of the chemical agent.

Abstract: A chemical mechanical polishing pad. The pad includes a surface and a polymer matrix capable of transmitting at least a portion of incident radiation. In addition, at least one embedded structure in the polymer matrix, including a portion of the pad where the embedded structure is not present, and a window integral to the pad defined by the portion of the pad where the embedded structure is not present.

Abstract: The present disclosure is directed at a chemical-mechanical planarization polishing pad comprising interconnecting elements and a polymer filler material, wherein the interconnecting elements include interconnecting junction points that are present at a density of 1 interconnecting junction point/cm3 to 1000 interconnecting junction points/cm3, and wherein the interconnecting elements have a length between interconnection junction points of 0.1 microns to 20 cm.