Abstract: The invention is a method and apparatus to extend the signal range of a digital image beyond the nominal sensor or data format range. The method and apparatus automatically acquires a scaled series of source data, applies noise reduction to the source data, and constructs a scaled composite with usable signal ranges greater than that of the individual data sources. Applied to digital images, the invention permits presentation and analysis of all signals from a subject in a single composite or an image resulting from the method and apparatus of the present invention. The present invention overcomes two defects in prior art systems: increased noise in the resultant composite image arising from rescaling of component images and dependence on evaluating image content to determine image scaling. Because this invention can be automated, it can be applied in numerous fields requiring high throughput.

Abstract: Methods and apparatus to facilitate communication between a user and one or more devices which are remote from the user, reduce the number of required button presses and further reduce keystroke errors, by including the functionality to associate a user selected default device with a particular set of buttons. A universal remote control unit suitable for use with various audio/visual entertainment devices may embody various aspects of the present invention.

Abstract: A system for optical detection of kinetic samples. The system includes a dual set of detectors linked to a single processor. The time of signal integration is different for each detector, allowing one detector to have a higher sensitivity by integrating over a longer time period while the second detector using shorter integration periods is able to measure kinetic events.

Abstract: A probe (1A) has a cutting blade portion (2) at a tip end that is brought into contact with a pad electrode (5). The cutting blade has a cutting edge that is in a plane parallel to the direction of sliding of the blade over a pad electrode, when the edge is brought into contact with the electrode. The cutting edge (2a) has a sloping or curved shape that comes closer to the electrode from the front side to the rear side of the blade along the direction of sliding. Thus, as the cutting edge (2a) cuts into an insulating coating (7) formed on the surface of the electrode, the probe ensures satisfactory electrical conduction between the probe (1A) and the electrode because it cuts through the coating without causing swarfs.

Abstract: A multiple-bit cell transistor includes a P type silicon substrate, agate insulation layer, a pair of N type source/drain regions, a pair of tunnel insulation layers, and a pair of floating gates. The silicon substrate is formed with a projection while the floating gates each are positioned on one of opposite side walls of the projection. Inter-polycrystalline insulation layers each are formed on one of the floating gates. A control gate faces the top of the projection via the gate insulation layer. An N type region is formed on each side of the projection and contacts the source/drain region adjoining it. The cell transistor lowers a required write voltage, broadens a current window, and enhances resistance to inter-band tunneling.

Abstract: A hand-held laser device includes a casing formed with a substantially hollow interior space and having a laser emitter thereinside. The laser emitter is formed with an exciting lamp and a laser rod. A source generating a stream of gaseous coolant is provided within the interior space. A fluid cooling arrangement at least partially surrounding the laser rod is disposed within the stream of gaseous coolant for heat removal therefrom.

Abstract: A multiple-bit cell transistor includes a P type silicon substrate, agate insulation layer, a pair of N type source/drain regions, a pair of tunnel insulation layers, and a pair of floating gates. The silicon substrate is formed with a projection while the floating gates each are positioned on one of opposite side walls of the projection. Inter-polycrystalline insulation layers each are formed on one of the floating gates. A control gate faces the top of the projection via the gate insulation layer. An N type region is formed on each side of the projection and contacts the source/drain region adjoining it. The cell transistor lowers a required write voltage, broadens a current window, and enhances resistance to inter-band tunneling.

Abstract: An electronic mixed water preparation device comprises a compact flush-mounted unit for electronically controlling mixed water in private households. Previously, such methods could only be implemented in an industrial environment or in combination with additional devices. The compact unit comprises an electronic controller and a step motor which acts upon a mechanical actuator. The preparation of mixed water can be exclusively carried out in conjunction with a temperature sensor whose measuring values are used to detect throughflow and excess temperature, in addition to actual temperature values.

Abstract: Disclosed is a solid state imaging device, comprising a unit pixel 101 including a photo diode 111 and a MOS transistor 112 for optical signal detection provided with a high-density buried layer 25 for storing optically generated charges generated by light irradiation in the photo diode 111, a vertical scanning signal driving scanning circuit 102 for outputting a scanning signal to a gate electrode 19, and a voltage boost scanning circuit 108 for outputting a boosted voltage higher than a power source voltage to a source region 16. In this case, a boosted voltage is applied from the voltage boost scanning circuit 108 to the source region 16, and the optically generated charges stored in the high-density buried layer 25 are swept out from the high-density buried layer 25 by a source voltage and a gate voltage risen by the boosted voltage.

Abstract: A solid-state imaging device is provided, which is capable of increasing an S/N ratio while enhancing a dynamic range, when a photoelectric signal is converted into a digital signal. This solid-state imaging device comprises: a plurality of photoelectric conversion devices arrayed in rows and columns, each of the photoelectric conversion devices converting an optical signal into an electric signal and outputting a first signal voltage; a difference signal generation circuit provided for each column, for sequentially inputting the first signal voltage and a second signal voltage obtained by initializing the photoelectric conversion devices, thereafter converting the first signal voltage and the second signal voltage into charges, generating a difference signal therebetween, and then outputting the difference signal after adjusting a gain according to a level of the difference signal; and an analog/digital conversion circuit connected to the output of the difference signal generation circuit.

Abstract: A laser perforator for perforating skin of a patient and obtaining of blood samples consists of laser light source for producing an output laser beam, a focusing arrangement for focusing the output laser beam at a skin area selected for perforation, a guiding arrangement, a power supply unit and a retaining arrangement for retaining the skin area. The retaining arrangement is formed to intensify blood circulation in the skin area selected for perforation.

Abstract: The invention is a method and apparatus to extend the signal range of a digital image beyond the nominal sensor or data format range. The method and apparatus automatically acquires a scaled series of source data, applies noise reduction to the source data, and constructs a scaled composite with usable signal ranges greater than that of the individual data sources. Applied to digital images, the invention permits presentation and analysis of all signals from a subject in a single composite or an image resulting from the method and apparatus of the present invention. The present invention overcomes two defects in prior art systems: increased noise in the resultant composite image arising from rescaling of component images and dependence on evaluating image content to determine image scaling. Because this invention can be automated, it can be applied in numerous fields requiring high throughput.

Abstract: A solid state imaging device includes a MOS image sensor of a threshold voltage modulation system employed in a video camera, an electronic camera, an image input camera, a scanner, a facsimile, or the like. The solid state imaging device includes a photo diode formed in a second semiconductor layer of opposite conductivity type in a first semiconductor layer of one conductivity type, and a light signal detecting insulated gate field effect transistor formed in a fourth semiconductor layer of the opposite conductivity type in a third semiconductor layer of one conductivity type adjacent to the photo diode. A carrier pocket is provided in the fourth semiconductor layer and a portion of the first semiconductor layer under the second semiconductor layer is thicker than that portion of the third semiconductor layer under the fourth semiconductor layer.

Abstract: There is provided a chopper type voltage comparator for comparing a sampled input voltage with a ramp voltage that is changed with a time, in which a bias voltage is changed according to the ramp voltage, and then the bias voltage comes up to a predetermined voltage value that is able to bring the chopper type voltage comparator into a comparing operation state when the ramp voltage becomes substantially equal to the input voltage. Accordingly, a voltage comparator whose consumption power can be suppressed rather than the prior art and an analog/digital-converter using the same can be provided.

Abstract: A first buried layer of one conductivity and a first well region of opposite conductivity are formed in a semiconductor layer using a first mask. A second mask is used to form a second buried layer and a second well region of the opposite conductivity and to introduce impurity of the one conductivity type into a surface of the second well to form a channel doped layer of the one conductivity. A high concentration buried layer of the opposite conductivity is formed by introducing opposite conductivity impurity into the second well region using a third mask. A gate insulating film is formed on the semiconductor layer by thermal oxidation. A source region and a drain region of the one conductivity type are formed on the surface of the second well region, on both sides of a gate electrode.

Abstract: A sole state imaging device includes a photodetection diode and an insulated gate field effect transistor provided adjacent to the photodetection diode for optical signal detection. In a method of making the device, a carrier pocket is formed in a second well region, and an element isolation insulating film is formed to isolate adjacent unit pixels from each other. In addition, an element isolation region of an opposite conductivity type is formed to isolate a second semiconductor layer of one conductivity type in such a way as to include the lower surface of the element isolation insulating film and reach a first semiconductor layer.

Abstract: A clamping and/or braking device with a basic body (3) has a clamping and/or braking region for pressurizing an element (9). Basic body (3) has an actuating mechanism which, upon actuation, causes a substantially elastic deformation of the basic body (3), so that the clamping and/or braking region is moved into or out of a pressurizing position or that the pressurizing force which the clamping and/or braking region exerts on the element (9) is changed. The actuating mechanism comprises a minimum of one chamber (15), which can be pressurized and which is located on or incorporated in the basic body (3) and which is bounded at least in part by a minimum of one wall (13), at least partial regions of which are flexible but tension-proof and/or pressure-resistant.

Abstract: Three-dimensional porous biodegradable and biocompatible, polymeric scaffolds for tissue engineering are prepared by a method involving effervescing of an effervescent salt in a gel to result in a porous structure. A polymer is dissolved in an organic solvent to prepare a polymer solution of high viscosity. Optionally, the polymer solution is mixed with an organic solvent that does not dissolve the polymer to concentrate the solution. An effervescent salt is homogeneously mixed with the polymer solution to give a polymer/salt/organic solvent mixed gel. The organic solvent is removed from the mixed gel to produce an organic solvent-free polymer/salt gel slurry. The gel slurry is submerged in a hot aqueous solution or acidic solution to cause the salt to effervesce at room temperature to form a porous three-dimensional polymeric structure. The polymeric structure is washed with distilled water and freeze-dried to yield a scaffold that is suitable for cell or tissue culture.

Abstract: The present invention relates to a grain roasting apparatus in which a blower is installed at one side of a body having a support at a lower portion of the same, a heated air flow path is installed in the blower, a heater is provided, a peel collecting port and a discharge port are installed at the other side of the body, rotation portions are installed in an upper portion of the heated air flow path and an upper portion of the discharging port, respectively, a rotary drum is installed in the rotation portions, rotation members are rotated together with the rotary drum, the rotary drum is inserted into the rotation members, the rotary is installed eccentrically about a rotation center, support portions are installed opposite each other at both ends of the same, a heated air flow port having a net and connected with the heated air flow path is protruded from one side of the support, the heated air inlet is inserted into an insertion portion of the rotary port, respectively, and is supported therein, a ring gea

Abstract: Disclosed is a solid state imaging device, comprising: a photodetection diode; and an insulated gate field effect transistor provided adjacent to the photodetection diode for optical signal detection. In this case, a carrier pocket is provided in a second well region, and an element isolation insulating film is formed to isolate adjacent unit pixels from each other. In addition, an element isolation region of an opposite conductivity type is formed to isolate a second semiconductor layer of one conductivity type in such a way as to include the lower surface of the element isolation insulating film and reach a first semiconductor layer.