Patents Assigned to INNOVATION SEMICONDUCTOR
  • Patent number: 12288800
    Abstract: A monolithic semiconductor LED display system comprising a layered semiconductor material system fabricated to form a plurality of light emitting switch devices. Each of the light emitting switch devices extends along a different axis from a common substrate and comprises a driver device and a light emitting diode. Each of the driver devices comprises, in adjacent order from the substrate and in series, a first type of doped region, a second type of doped region and another of the first type of doped region. Areas of the layered semiconductor material system not utilized for the LED elements are fabricated to form circuitry in two or more of the doped regions for each of the light emitting switch devices.
    Type: Grant
    Filed: November 16, 2021
    Date of Patent: April 29, 2025
    Assignee: INNOVATION SEMICONDUCTOR
    Inventor: Matthew T. Hartensveld
  • Publication number: 20240234396
    Abstract: A color-tunable LED system that is configured to emit a variety of peak wavelengths of light in response to variations in a driving current density includes an n-type region, a p-type region, and a multiple quantum well (MQW) region formed between the n-type region and the p-type region. The MQW region includes parallel layers, each alloyed with a percentage of Indium to enable a range of light emission between 400 and 600 nm, and one or more shaped depressions formed within a portion of the parallel layers. Each of the one or more shaped depressions has a lower concentration of the alloyed percentage of the Indium than other portions of the parallel layers. Transition regions between the one or more shaped depressions and the other portions of the parallel layers have a higher concentration of the alloyed percentage of the Indium which decreases with distance from the one or more shaped depressions. Use of the monolithic color-tunable LED system can make use of a single LED to act as a pixel.
    Type: Application
    Filed: January 10, 2024
    Publication date: July 11, 2024
    Applicant: INNOVATION SEMICONDUCTOR
    Inventor: Matthew T. HARTENSVELD
  • Patent number: 11011571
    Abstract: A nanowire system includes a substrate and at least one nanowire structure which extends out along an axis from a surface of the substrate. The nanowire structure comprises a light emitting diode and a device driver electrically coupled to control an operational state of the light emitting diode. The light emitting diode and the device driver are integrated to each share at least one doped region.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: May 18, 2021
    Assignee: INNOVATION SEMICONDUCTOR
    Inventors: Matthew Hartensveld, Jing Zhang