Abstract: The invention comprises a thermal flow sensor for determining the temperature and the flow velocity of a flowing measuring medium, comprising: a functional element which is configured to determine the temperature of the measuring medium and to influence the temperature of the measuring medium; and a control and evaluation unit which is configured to determine the temperature of the measuring medium in a first interval of time by means of the functional element and to determine the flow velocity of the measuring medium in a second interval of time following the first interval of time, and a method for determining the temperature and the flow velocity of the measuring medium by means of the thermal flow sensor according to the invention, and a sensor system comprising such a thermal flow sensor and a further sensor type.

Abstract: The present disclosure relates to an apparatus for determining and/or monitoring the mass flow and/or flow velocity of a flowable medium through a pipeline, comprising at least one heating element, which is at least partially and/or at times in thermal contact with the medium and is operable at least at times by means of a heating signal. Furthermore, the present disclosure relates to a method for producing an apparatus of the disclosure. According to the disclosure, the heating element is at least partially surrounded in a region facing the medium by a unit comprising a material with an anisotropic thermal conductivity.

Abstract: A planar heating element comprising a PTC resistive structure, which is arranged in a defined surface region of a first surface of a support substrate. The electrical connection contacts for connection to an electrical voltage source are associated with the PTC resistive structure, wherein the PTC resistive structure—starting from the two electrical connection contacts—has at least one internal conductive trace and a parallel connected, external conductive trace. The internal conductive trace has a greater resistance than the external conductive trace and the resistances of the internal conductive trace and external conductive trace are so sized that upon applying a voltage an essentially uniform temperature distribution is present within the defined surface region.

Abstract: The present disclosure resides in a sensor element for determining a physical, measured variable of a measured medium, comprising: a planar substrate; a functional layer applied on a surface of the substrate; a passivating layer applied on the functional layer; a metal connecting layer applied on the surface of the passivating layer such that the passivating layer is completely covered; and a metal platelet applied on the surface of the metal connecting layer such that no contact can occur between the passivating layer and the measured medium, as well as residing in a thermal flow sensor, which has at least two such sensor elements.

Abstract: A method for manufacturing a temperature sensor, which includes at least one temperature sensor element with an at least partially metallized face and a support, includes applying a connecting layer of at least gold, silver and/or palladium to the support, applying a silver sinter paste layer, arranging the temperature sensor element on the support, so that the temperature sensor element with the at least partially metallized face contacts the support via the connecting layer and the silver paste layer, and sintering of the silver sinter paste layer for connecting the temperature sensor element with the support.

Abstract: The present disclosure relates to a thin film sensor element for determining and/or monitoring temperature. For this purpose, a resistive structure is provided, which is arranged in a resistive region on a substrate. The resistive structure is so formed that a first section of the resistive structure branches at a first reference point into two branches, and that a second section of the resistive structure branches at a second reference point into two other branches. In a contact region, the four branches are connected with four intermediate conductors in four contact areas, which are insulated from one another. In this way, the thin film sensor element is a real four conductor sensor element, wherein the reference points of the four conductor circuit lie within the resistive region. The resistance thermometer with the thin film sensor element of the invention is distinguished by a high accuracy.

Abstract: A sensor for determining at least one process variable of a medium, comprising: a metallic substrate which has a recess at least in a first area; a first dielectric layer which is arranged on the metallic substrate at least in the first area, wherein the first dielectric layer forms a membrane; at least one heating structure which is arranged on the first dielectric layer formed as a membrane in the first area, wherein the heating structure heats the medium; at least one temperature sensor element assigned to the first area, which temperature sensor element is arranged so as to be spaced apart from the heating structure on the first dielectric layer and detects the temperature of the medium heated on the heating structure; and at least one protective layer which covers at least the at least one heating structure and the at least one temperature sensor element.

Abstract: A thermal flow sensor for determining a gas or the composition of a gas mixture as well as its flow velocity, comprising: a substrate onto which at least a first dielectric layer is applied; at least one heating structure that is applied onto the first dielectric layer and serves to heat the gas or the gas mixture; at least a first temperature sensor element that is applied onto the first dielectric layer at a distance from the heating structure and captures the temperature of the gas or gas mixture heated at the heating structure; a control device that controls the heating structure in a first operating mode in such a way that the heating structure shows a predetermined temperature, and controls the heating structure in a second operating mode in such a way that a power input into the heating structure corresponds to a predetermined power; and an evaluation unit which determines at least one physical characteristic of the gas present or the gas mixture on the basis of the operating modes and determines the g

Abstract: A thermal flow sensor for determining a gas or the composition of a gas mixture as well as its flow velocity, comprising: a substrate onto which at least a first dielectric layer is applied; at least one heating structure that is applied onto the first dielectric layer and serves to heat the gas or the gas mixture; at least a first temperature sensor element that is applied onto the first dielectric layer at a distance from the heating structure and captures the temperature of the gas or gas mixture heated at the heating structure; a control device that controls the heating structure in a first operating mode in such a way that the heating structure shows a predetermined temperature, and controls the heating structure in a second operating mode in such a way that a power input into the heating structure corresponds to a predetermined power; and an evaluation unit which determines at least one physical characteristic of the gas present or the gas mixture on the basis of the operating modes and determines the g

Abstract: A radiation source for emitting infrared electromagnetic radiation and having at least one source element. The radiation source is characterized by features including that: the source element is embodied in the form of a silicon carbide fiber; the source element is coated at least sectionally with a metal coating, via which the source element can be heated; and the metal coating heats the source element at least at times in such a manner that the source element emits infrared radiation at least at times. A method for the manufacture of a radiation source is likewise relevant.

Abstract: A sensor of an apparatus for determining and/or monitoring at least one process variable. The sensor includes: at least one substrate, which is composed of a substrate material; at least one sensitive layer, which is applied on the substrate and which produces at least one measured variable dependent on the process variable and/or on a change of the process variable; and at least one passivating layer, which is applied on the sensitive layer. The invention provides that the passivating layer consists at least partially of the substrate material.

Abstract: A resistance thermometer, composed of a plurality of components, at least comprising: at least one substrate, which is composed essentially of a material, whose thermal coefficient of expansion is essentially greater than 10.5 ppm/K; at least one resistive element, which is arranged on the substrate; and at least one electrically insulating, separating layer, which is arranged essentially between the resistive element and the substrate. The invention includes that the effective thermal coefficient of expansion TCEeff is greater than or equal to the thermal coefficient of expansion of the bulk metal of the resistive element.

Abstract: The invention relates to an apparatus for determining and/or monitoring at least one process variable. The apparatus includes: At least one substrate (1), which is composed of a substrate material; at least one sensitive layer (2), which is applied on the substrate (1) and which produces at least one measured variable dependent on the process variable and/or on a change of the process variable; and at least one passivating layer (3), which is applied on the sensitive layer. The invention provides that the passivating layer (3) consists at least partially of the substrate material.

Abstract: A resistance thermometer, composed of a plurality of components, at least comprising: at least one substrate, which is composed essentially of a material, whose thermal coefficient of expansion is essentially greater than 10.5 ppm/K; at least one resistive element, which is arranged on the substrate; and at least one electrically insulating, separating layer, which is arranged essentially between the resistive element and the substrate. The invention includes that the effective thermal coefficient of expansion TCEeff is greater than or equal to the thermal coefficient of expansion of the bulk metal of the resistive element.