Patents Assigned to Inostek Inc.
  • Patent number: 6993828
    Abstract: A metal resistor and a method for manufacturing the resistor are provided. A first insulation film is formed on a substrate, a photosensitive film is applied on the insulation film, and an insulation film pattern is formed by patterning the insulation film. After a metal thin film is formed among the insulation film pattern and on the photosensitive film, with removing the photo-sensitive film is a metal thin film pattern formed among the insulation film pattern. On the metal thin film pattern and the insulation film pattern is a second insulation film formed and at the pad region of the metal thin film pattern is a lead wire connected, after that, a metal thin film resistor is manufactured with forming a preservation film on and around the lead wire.
    Type: Grant
    Filed: February 22, 2002
    Date of Patent: February 7, 2006
    Assignee: Inostek Inc.
    Inventors: Jo-Woong Ha, Seung-Hyun Kim, Dong-Yeon Park, Dong-Su Lee, Hyun-Jung Woo
  • Patent number: 6723186
    Abstract: A method of manufacturing a metallic film consisting of giant single crystal grains is disclosed. The method includes depositing the metallic film on a substrate under an atmosphere of an inert gas and a specified additive gas to change a surface energy, grain boundary energy, or internal strain energy of the metallic film. The method also includes annealing step of the resultant of the deposition at a temperature suitable for the grain growth of the metallic film containing the additive gases. According to the method, the metallic film consisting of giant single crystal grains having a grain size whose ratio of thickness to an average grain size of the film is above 50 can be produced without depending upon the kind of substrate and deposition method.
    Type: Grant
    Filed: July 30, 2001
    Date of Patent: April 20, 2004
    Assignee: Inostek Inc.
    Inventors: Dong Su Lee, Dong Yeon Park, Hyun Jung Woo, Seung Hyun Kim, Jowoong Ha, Eui Joon Yoon