Patents Assigned to Insotek Inc.
  • Publication number: 20020015793
    Abstract: A method of manufacturing a metallic film consisting of giant single crystal grains is disclosed. The method includes depositing the metallic film on a substrate under an atmosphere of an inert gas and a specified additive gas to change a surface energy, grain boundary energy, or internal strain energy of the metallic film. The method also includes annealing step of the resultant of the deposition at a temperature suitable for the grain growth of the metallic film containing the additive gases. According to the method, the metallic film consisting of giant single crystal grains having a grain size whose ratio of thickness to an average grain size of the film is above 50 can be produced without depending upon the kind of substrate and deposition method.
    Type: Application
    Filed: July 30, 2001
    Publication date: February 7, 2002
    Applicant: Insotek Inc.
    Inventors: Dong Su Lee, Dong Yeon Park, Hyun Jung Woo, Seung Hyun Kim, Jowoong Ha, Eui Joon Yoon