Abstract: A data management system for reviewing at least one layer of at least one semiconductor wafer is connected to a first inspection device and a second inspection device. The system includes a server which is connected to the first and second inspection devices. A review station is connected to the server. In use, the first inspection device scans at least one layer of at least one semiconductor wafer so as to yield a first set of detected defects. In addition, the second inspection device scans at least one layer of at least one semiconductor wafer so as to yield a second set of detected defects. The first and second sets of detected defects are uploaded into a database in the server. The review station is then used to extract a sample of the first and second sets of detected defects from the database using at least one defect sampling condition.

Abstract: A method and apparatus for inspecting the surface of an object such as a semiconductor wafer for contaminant particles. The apparatus includes a light source for illuminating an area on the surface of the object. A camera is positioned above the surface of the object and detects light scattered by any particles present on the surface at that area, the camera detecting light scattered from the area over a field of view, or window, which is defined by the camera, a focusing lens and the relative distance therebetween. A computer is coupled to the camera and serves to store, process, identify and/or analyze the light detected by the camera. The computer also serves to calculate a minimum light intensity threshold level which is dynamic to compensate for variances in the background light intensity of different portions of the object. The value of the threshold level is calculated for each window of the object defined by the apparatus using the equation: T.sub.W =.mu..sub.W +.eta.-.delta..sub.W, where T.sub.

Abstract: A method and system for establishing a common reference point on a semiconductor wafer inspected by two or more scanning mechanisms. The semiconductor wafer includes a plurality of dies of identical size, each die being generally rectangularly shaped and having four corners. Adjacent dies are separated by a die street, the sum of the width of a die and the width of a die street equaling a die period. The method includes scanning the semiconductor wafer with a first scanning mechanism to establish a first coordinate system for the wafer. The first scanning mechanism determines a point on the wafer to be the center of the wafer which is assigned a first coordinate value relative to the first coordinate system. The location of the common reference point in the first coordinate system is calculated as the die corner which is within half the die period from the first coordinate value, the common reference point being assigned a second coordinate value in the first coordinate system.

Abstract: An apparatus and method for detecting particles on a surface of a semiconductor wafer having repetitive patterns includes a laser for illuminating an area on the front surface at grazing angle of incidence with a beam of polarized light. A lens collects light scattered from the area and forms a Fourier diffraction pattern of the area illuminated. A Fourier mask blocks out light collected by the lens at locations in the Fourier diffraction pattern where the intensity is above a predetermined level indicative of background information and leaves in light at locations where the intensity is below the threshold level indicative of possible particle information. The Fourier mask includes an optically addressable spatial light modulator and a polarization discriminator. A camera detects scattered light collected from the area by the lens and not blocked out by the Fourier mask.

Abstract: A Fourier mask includes a base plate, an aperture plate having a pair of cross hairs fixedly mounded on the base plate and a pair of four bar linkages, each four bar linkage being made up of a pair of parallel cross bars and a pair of parallel mask bars pivotally interconnected end-to-end in a closed loop configuration. Each cross bar in each four bar linkage is pivotally mounted on the base plate, the four bar linkages being arranged on the base plate such that the mask bars in one four bar linkage are at right angles to the mask bar in the other four bar linkage and each pair of parallel mask bars is symmetrically disposed about one of the cross hairs. By pivotally moving either or both sets of cross bars on the base plate, the spacing between the parallel mask bars in either a both sets of mask bars can be changed as desired.

Abstract: A robot system includes a support assembly and a robot arm. The robot arm includes a platform and a carriage movable back and forth along the platform. A shuttle is movable back and forth along the carriage. A first belt and pulley system is provided for moving the carriage back and forth along the platform and a second belt and pulley system is provided for moving the shuttle back and forth along the carriage. Each belt and pulley system includes a belt and a first pulley. The diameter of the pulley on the first belt and pulley system is one half the diameter of the pulley on the second belt and pulley system. The first pulley on the first belt and pulley system and the first pulley on the second belt and pulley system are fixedly coupled relative to each other so that rotational movement of one of the first pulleys will cause the same amount of rotational movement of the other one of said first pulleys.

Abstract: An apparatus for detecting particles on the front surface of a patterned semiconductor wafer having repetitive patterns includes a laser for illuminating an area on the front surface at grazing angle of incidence with a beam of polarized light. A lens collects light scattered from the area and forms a Fourier diffraction pattern of the area illuminated. A Fourier mask blocks out light collected by the lens at locations in the Fourier diffraction pattern where the intensity is above a predetermined level indicative of background information and leaves in light at locations where the intensity is below the threshold level indicative of possible particle information. The Fourier mask includes an optically addressable spatial light modulator and a crossed polarizer with the Fourier diffraction pattern being used as both a read beam and a write beam for the spatial light modulator. A camera detects scattered light collected from the area by the lens and not blocked out by the Fourier mask.

Abstract: A method and apparatus for detecting particles on a surface of an object, such as a virgin or patterned semiconductor wafer, ceramic tile, or the like. In one embodiment, an apparatus is provided in which a scanning beam of laser light is brought to focus as an arcuate scan line on a surface of the object at a grazing angle of incidence using an off-axis hypertelecentric mirror. A pair of light detectors are positioned at a meridional angle of about 30 degrees and at an azimuthal angle of about 4 degrees to measure forward scattered light from the surface. The object is then moved translationally so that the beam can scan another line of the surface. A light trap is provided to trap light that is reflected by the surface, and a series of masks are provided to mask light which is scattered by the hypertelecentric mirror and, in the case of patterned objects, light which is diffracted by the pattern imprinted on the object.