Patents Assigned to INST. WYSOKICH CISNIEN POLSKIEJ AKADEMII NAUK
  • AlInGaN alloy based laser diode
    Patent number: 10439362
    Abstract: The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminum content.
    Type: Grant
    Filed: November 10, 2016
    Date of Patent: October 8, 2019
    Assignees: TOPGAN SP. Z O.O., INST. WYSOKICH CISNIEN POLSKIEJ AKADEMII NAUK
    Inventors: Szymon Stanczyk, Anna Kafar, Tadeusz Suski, Szymon Grzanka, Robert Czernecki, Piotr Perlin