Abstract: A Read-Only Memory is comprised of a plurality of memory cells. An antifuse film is disposed between and in contact with an underlying heavily N-doped word line layer and an overlying metallic address line layer. The word line is disposed on an insulating semiconductor substrate and is in contact with a surrounding oxide layer. The programmable material is irreversibly configured between the two resistivity states by application of a threshold voltage. The threshold voltage alters the electrical state of the programmable material only in the proximity of that portion of the programmable material to which the threshold voltage has been applied. The resistivity of the low resistivity state is selectively decreased by implanting nonactivated conductive dopants into film. These dopants are characterized by having a nonactivated state where the conduction of carriers in the film is not enhanced, and an activated state where the conduction of carriers in the film is enhanced.

Abstract: The word line pitch within a read-only memory is decreased, thereby increasing the cell density within the memory, without imposing any additional or stricter spacing rules or fabrication techniques utilized in the manufacture of the read-only memory integrated circuit chip. The read-only memory is comprised of a plurality of memory cells. A two-dimensional semiconductor diode layer is laid down on a plurality of word lines which have previously been disposed upon a semiconductor supporting substrate. The semiconductor diode layer is disposed on the plurality of word lines without regard to any alignment criteria. A programmable material is inlaid on the Schottky diodes and a plurality of bit lines laid upon the programmable material. The bit lines and word lines are orthogonally disposed with respect to the Schottky diodes so that each diode is uniquely addressed by one word line and one bit line.