Patents Assigned to Instititt for Energiteknikk
  • Surface passivation of silicon based wafers
    Patent number: 8916768
    Abstract: The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.
    Type: Grant
    Filed: April 12, 2006
    Date of Patent: December 23, 2014
    Assignees: Rec Solar Pte. Ltd., Universitetet I Oslo, Instititt for Energiteknikk
    Inventors: Alexander Ulyashin, Andreas Bentzen, Bengt Svensson, Arve Holt, Erik Sauar