Abstract: A semiconductor element includes an enhancement-type transistor structure with a layer construction including a base substrate, a first semiconductor layer, and a second semiconductor layer, which are arranged one on top of the other along a first direction. The transistor structure further has a source electrode, a gate electrode, and a drain electrode, which are spaced apart from one another along a second direction that is transverse to the first direction. The first and second semiconductor layers are formed by different group III nitride materials, such that a 2D electron gas forms in a boundary region of the first and second semiconductor layers. The first and second semiconductor layers have holes in the region of the gate electrode, between which holes multiple fins including the group III nitride materials remain. The gate electrode has a plurality of gate fingers extending into the holes.

Abstract: A camera module for electronically recording images has an image sensor with a plurality of image cells. Each image cell provides an electric image signal as a function of the intensity of incident light. Each image cell has a light-sensitive element for generating a light-dependent current, as well as at least one MOS transistor which is arranged in series therewith. The gate of the MOS transistor is at a fixed potential, and the source-drain path is flowed through by the light-dependent current. In accordance with one aspect of the invention, there is arranged at least one light source in the region of the image sensor by means of which the image cells can be illuminated.

Abstract: A device for the FPN correction of image signals which are generated by image cells of an image sensor comprises a discriminator for determining in which value range out of at least two value ranges a value of an image signal of an image cell is located at a predetermined instant of time. The result determined by the discriminator is feed to a correction device. The correction device selects correction coefficients from a plurality of sets of correction coefficients as a function of the result determined by the discriminator, and a transformation unit calculates the corrected value for the image signal by using the selected correction coefficients.

Abstract: In order to correct for fixed pattern noise in the signals of an image sensor, image signal values are read out from the pixels of the sensor. Individual correction values are added as analogue quantities to the image signal values via a signal path having a defined transfer function. Parameters which are characteristic of the defined transfer function are provided in a memory and the individual correction values are calculated in a correction value calculating unit using the parameters provided.

Abstract: Inventive methods are provided for the production of large-area membrane masks, wherein an inexpedient mechanical excessive strain on the membrane or of the membrane layer/etching stop layer/supporting wafer system or the resulting breaking of the components is avoided, which excessive strain occurs particularly due to the employment of an etching cell or generally due to the thin semiconductor layers. The stripping of the semiconductor support layer is preferably performed in two partial steps that are carried out in a mechanically sealed etching cell or with a protective coating, or that one partial step is performed with an etching cell and one with a protective coating, or that the stripping of the semiconductor support layer is performed in a mechanically sealed etching cell initially with a supporting grid and that the supporting grid is removed only after withdrawal from the etching cell.

Abstract: Disclosed is an image-recorder chip having a multiplicity of image cells provided with field-effect transistors disposed in the form of a two dimensional array and having a readout logic. This present invention is directed to the object of projection of high input signal dynamics onto reduced output signal dynamics, and is distinguished by the arrangement of the light-sensitive element of each image cell being connected between one electrode of a first MOS transistor and gate of a second MOS transistor, and by the other electrode of the first MOS transistor being connected to the one pole of a voltage supply source.