Abstract: A tandem solar cell structure is described with the following features: (a) Monolithic configuration with at least two different absorbers (104, 108) of different materials for photovoltaic energy conversion (b) an absorber (108) consisting of crystalline silicon (c) a charge carrier selective contact arranged on the side of the silicon absorber (108) directed to the adjacent absorber (104) (d) configuration of the charge carrier selective contact from a thin interface oxide 107 and an amorphous, partially crystalline or polycrystalline layer applied thereto, mainly consisting of silicon, either p (106) or n doped (201) The charge carrier selective contact made up of layers 107 and 106 or 201, respectively, ensures excellent surface passivation of the crystalline silicon absorber 108, as well as selective extraction of a charge carrier type from the latter over the entire surface. Thus, a vertical current flow is achieved, so that lateral transverse conductivity is not required in every sub-cell.

Abstract: A tandem solar cell structure is described with the following features: (a) Monolithic configuration with at least two different absorbers (104, 108) of different materials for photovoltaic energy conversion (b) an absorber (108) consisting of crystalline silicon (c) a charge carrier selective contact arranged on the side of the silicon absorber (108) directed to the adjacent absorber (104) (d) configuration of the charge carrier selective contact from a thin interface oxide 107 and an amorphous, partially crystalline or polycrystalline layer applied thereto, mainly consisting of silicon, either p (106) or n doped (201) The charge carrier selective contact made up of layers 107 and 106 or 201, respectively, ensures excellent surface passivation of the crystalline silicon absorber 108, as well as selective extraction of a charge carrier type from the latter over the entire surface. Thus, a vertical current flow is achieved, so that lateral transverse conductivity is not required in every sub-cell.

Abstract: The invention relates to a method for metallizing and connecting solar cell substrates and to a photovoltaic module made of several metallized solar cells that are electrically connected to one another. According to the invention, a solar cell substrate, in which second metal layers forming electrical metal contacts are optionally provided, is attached to a carrier substrate, on the surface of which at least one first metal layer is formed in a suitable pattern. By localized irradiation of the metal layer with laser radiation through the solar cell substrate or the carrier substrate, energy is introduced such that the metal layer is heated by absorbed laser radiation for an irreversible bonding to the adjacent surface of the solar cell substrate. By the laser bonding of the metal layer on the carrier substrate to the solar cell substrate, solar cells can be connected to form a photovoltaic module.

Abstract: A method for fabricating a solar cell including a semiconductor substrate is proposed where electrical contacting is made on the back side of the semiconductor substrate. The back side of the semiconductor substrate has locally doped regions. The adjacent regions exhibit different doping from the region. The two regions are initially coated with electrically conductive material over the entire area. So that the conductive material does not short-circuit the solar cell, the two regions are covered with a thin electrically insulating layer at least at the region boundaries. The electrically conductive layer is separated by applying an etch barrier layer over the entire surface which is then removed free from masking and selectively e.g. by laser ablation, locally above the insulating layer. The conductive layer is locally removed in the area of the openings of the etch barrier layer by subsequent action of an etching solution.

Abstract: The invention relates to a heterojunction solar cell and a method for the production thereof. The heterojunction solar cell has an absorber layer made of silicon with a basic doping and at least one heterojunction layer of a doped semiconductor material whose band gap differs from that of the silicon of the absorber layer. The absorber layer has a doped layer at an interface directed toward the heterojunction layer, the doping concentration of said doped layer being greater than the basic doping concentration of the absorber layer. As a result of this doping profile, a field effect can be caused which prevents charge carrier pairs produced within the absorber layer from diffusing toward the interface between the absorber layer and the heterojunction layer and from recombining there.

Abstract: The invention relates to a rear-contact solar cell and to a method for producing the same, wherein elongate emitter regions (5) and elongate base regions (7) are defined in a semiconductor substrate (1) in a finely interleaved manner on the surface of the rear side of the cell. The elongate emitter regions (5) are contacted by elongate emitter contacts (11) that extend at a right angle thereto, and the elongate base regions (7) are contacted by elongate base contacts (13) that extend at a right angle thereto, the structural width of the emitter and base regions (5, 7) being substantially smaller than the structural width of the emitter and base contacts. The finely interleaved arrangement of emitter and base regions (5, 7) results in good current collecting properties and low series resistances within the semiconductor substrate. Owing to the less complicated structures of the metal contacts, the latter can be produced in a simple and reliable manner.

Abstract: A solar cell with a dielectric double layer and also a method for the manufacture thereof are described. A first dielectric layer (3), which contains aluminium oxide or consists of aluminium oxide, and a second, hydrogen-containing dielectric layer (5) are produced by means of atomic layer deposition, allowing very good passivation of the surface of solar cells to be achieved.

Abstract: The invention concerns a solar cell (1) and a method for making same, said solar cell (1) comprising on its rear surface (3) both the emission contact (43) and the base contact (45), those two contacts (43, 45) being electrically isolated from each other by flanks (5) whereof the metal coating has been removed. The emitting zones (4) of the rear surface (3) of the cell are connected by channels to the transmitter (9) of the front face (8) of the cell. The emitting zones (4) of the rear surface (3) of the cell and the channels (7) consist of a laser. The metal coating of the side walls is removed by selective etching, said metal coating being removed only in the zone of the flanks (5) where the etching barrier layer (11) is insufficient.

Abstract: A method for fabricating a solar cell (1) comprising a semiconductor substrate (2) is proposed where electrical contacting is made on the back side of the semiconductor substrate. The back side of the semiconductor substrate has locally doped regions (3). The adjacent regions (4) exhibit different doping from the region (3). The two regions (3, 4) are initially coated with electrically conductive material (5) over the entire area. So that the conductive material (5) does not short-circuit the solar cell, the two regions (3, 4) are covered with a thin electrically insulating layer (7) at least at the region boundaries (6). The electrically conductive layer (5) is separated by applying an etch barrier layer (8) over the entire surface which is then removed free from masking and selectively e.g. by laser ablation, locally above the insulating layer (7). The conductive layer is locally removed in the area of the openings (9) of the etch barrier layer (8) by subsequent action of an etching solution.

Abstract: A solar cell (1) is proposed, which is having at least at one side a semiconductor surface (2), on which edges (3) are formed having flank-like regions (4) running substantially parallel to the substrate normal and on which the electrical conductive contacts (5) are arranged. To be able to produce solar cells using simple technology with high cell efficiencies the electrical conductive material is deposited to the flank-like regions as well as to some none flank-like areas (6). The electrical conductive material is removed mask-free and selectively from the none flank-like areas resulting in electrical conducting contacts remaining on the flank-like regions only.