Patents Assigned to Institut National Polytechnique de Toulouse (I.N.P.T.)
  • Patent number: 10199376
    Abstract: A cell includes at least two semiconductor structures of the same nature, these two structures both employing voltages and currents that are unidirectional, each structure having an anode (10), a cathode (14) and optionally a gate (16). The structures are integrated into the volume of one and the same semiconductor substrate (4). The cathodes (14), and possibly the gates (16), are arranged on a first side of the semiconductor substrate (4). The anodes (10) are each arranged on a second side of the semiconductor substrate (4), which side is opposite the first side, facing the cathodes and possibly the corresponding gates. Two electrodes, anodes or cathodes, of two separate structures, are electrically connected to each other.
    Type: Grant
    Filed: October 9, 2012
    Date of Patent: February 5, 2019
    Assignees: Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique de Toulouse (I.N.P.T.)
    Inventors: Abdelhakim Bourennane, Marie Breil-Dupuy, Frederic Richardeau, Jean-Louis Sanchez
  • Patent number: 8431190
    Abstract: A method for depositing a hard metallic chrome coating or similar metal by chemical vapor deposition on a metallic substrate, includes: a) preparing a solution containing, in an oxygen-free solvent, i) a molecular compound of the bis(arene) family that's a precursor of the deposited metal with a decomposition temperature 300° C.-550° C., and ii) a chlorinated additive; b) introducing the solution as aerosol into a heated evaporator at a temperature between the solvent boiling temperature and the precursor decomposition temperature (PDT); and c) driving the vaporized aerosol from the evaporator towards a CVD reactor including a susceptor carrying the substrate, heated above the PDT, up to 550° C., the evaporator and CVD reactor being subjected to atmospheric pressure. This DLI-CVD method performed at low temperature and atmospheric pressure enables continuous industrial treatment of large metallic plates, producing hard, monolayer or nanostructured multilayer metallic coatings.
    Type: Grant
    Filed: July 19, 2007
    Date of Patent: April 30, 2013
    Assignee: Institut National Polytechnique de Toulouse (I.N.P.T.)
    Inventors: Francis Maury, Aurélia Douard
  • Patent number: 8343582
    Abstract: A method for depositing a non-oxide ceramic-type coating based on chrome carbides, nitrides or carbonitrides, by DLI-CVD at low temperature and atmospheric pressure on a metallic substrate, includes: a) a solution is prepared, containing a molecular compound which is a precursor of the metal to be deposited, belongs to the bis(arene) family, and has a decomposition temperature of 300° C.-550° C., the compound being dissolved in an oxygen atom depleted solvent; b) the solution is introduced as aerosol into a heated evaporator at a temperature between the solvent boiling temperature and the precursor decomposition temperature; and c) the precursor and the vaporized solvent are driven from the evaporator towards a CVD reactor having cold walls, with a susceptor carrying the substrate to be covered and heated to a temperature higher than the decomposition temperature of the precursor, to a maximum of 550° C., the evaporator and the CVD reactor being at atmospheric pressure.
    Type: Grant
    Filed: July 19, 2007
    Date of Patent: January 1, 2013
    Assignee: Institut National Polytechnique de Toulouse (I.N.P.T.)
    Inventors: Francis Maury, Aurélia Douard
  • Publication number: 20100047449
    Abstract: A method for depositing a non-oxide ceramic-type coating based on chrome carbides, nitrides or carbonitrides, by DLI-CVD at low temperature and atmospheric pressure on a metallic substrate, includes: a) a solution is prepared, containing a molecular compound which is a precursor of the metal to be deposited, belongs to the bis(arene) family, and has a decomposition temperature of 300° C.-550° C., the compound being dissolved in an oxygen atom depleted solvent; b) the solution is introduced as aerosol into a heated evaporator at a temperature between the solvent boiling temperature and the precursor decomposition temperature; and c) the precursor and the vaporized solvent are driven from the evaporator towards a CVD reactor having cold walls, with a susceptor carrying the substrate to be covered and heated to a temperature higher than the decomposition temperature of the precursor, to a maximum of 550° C., the evaporator and the CVD reactor being at atmospheric pressure.
    Type: Application
    Filed: July 19, 2007
    Publication date: February 25, 2010
    Applicant: Institut National Polytechnique De Toulouse (I.N.P.T.)
    Inventors: Francis Maury, Aurelia Douard
  • Patent number: 5942659
    Abstract: A process for producing fatty acids or fatty acid derivatives from oleaginous plants. This process is characterized in that transgenic oleaginous plants are produced having on the one hand at least one gene coding for a lipase enzyme, the so-called lipase gene, and on the other hand, associated with this lipase gene, a promoter permitting an expression of the gene either in compartments different from the lipid accumulation compartments, or by exogenous induction. The seeds or fruits containing the plant lipids are collected, the seeds or fruits are crushed, if necessary after induction treatment, so as to bring the lipids and lipase into contact, the whole mixture is incubated in order to effect an enzymatic hydrolysis of the lipids, and the fatty acids or derivatives thereof are extracted.
    Type: Grant
    Filed: January 24, 1997
    Date of Patent: August 24, 1999
    Assignee: Institut National Polytechnique de Toulouse (I.N.P.T.)
    Inventors: Gilbert Alibert, Zephirin Mouloungui, Alain Boudet