Abstract: A method and circuit for compensating variations induced by temperature, strain and manufacturing technology in CMOS video sensors. Using at least two reference CMOS sensors, held at the same temperature level as the CMOS video sensors to be compensated and which are not irradiated, two reference signals are generated whereof one corresponds to a reference dark value whilst the other one, in response to the application of an electric current, corresponds to a reference illumination value. The reference signals are amplified separately of each other. At least one correction value is stored in a memory unit for each CMOS video sensor point to be compensated, such that output signals corrected by FPN (=fixed pattern noise) will be obtained. The FPN-corrected output signals as well as the reference signals obtained are supplied to the A/D converter where the output signals of the CMOS video sensor are compensated and converted into digital signals.

Abstract: A method for manufacturing solar cells, more specifically thin-film solar cells, particularly thin-film solar cells on which CuInSe.sub.2 is deposited. A substrate is provided on which a multi-layer structure is formed by depositing thereon a layer defined by a compound including several basic substances, such as copper-indium-diselenide (CuInSe.sub.2), or a closely-related compound where copper (Cu) and indium (In) can be replaced totally or partially with Silver (Ag) and gallium (Ga), respectively, and where selenium (Se) can be replaced totally or partially with sulphur (S) and tellurium (Te), and where the concentration of the basic substances in the layer varies. The substrate is placed on the inside of a rotatable, tubular carrier device, after which the substrate is heated, and substance sources are provided for depositing the basic substances on the substrate.