Patents Assigned to Institute of Advanced Industrial Science and Technology
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Publication number: 20240376618Abstract: A hydrogen production system includes a hydrogen production facility and a management server. The management server includes an operation plan creation unit and an operation plan output unit. The operation plan creation unit creates an operation plan for the hydrogen production facility. The operation plan output unit outputs data including the operation plan created by the operation plan creation unit. The operation plan creation unit creates an operation plan for the hydrogen production facility including a demand response possible amount for each unit time based on a demand response consideration for each unit time determined in advance.Type: ApplicationFiled: August 15, 2022Publication date: November 14, 2024Applicants: ENEOS Corporation, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Kosuke HARADA, Hirofumi TAKAMI, Ichiro OKUMO, Kazuki UEHARA, Hirokazu KOJIMA, Hiroshi KIKUSATO, Takashi OOZEKI, Hirohide FURUTANI
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Publication number: 20240377180Abstract: A flexible sensor includes a main substrate having flexibility, a transistor over the main substrate, a support substrate over the transistor, wherein the support substrate has flexibility and at least an outer surface of the support substrate comprises a material having electric insulation, and a variable resistance part over a first surface which is an upper surface of the support substrate, in which a resistance value of the variable resistance part changes according to strain of the variable resistance part.Type: ApplicationFiled: July 22, 2024Publication date: November 14, 2024Applicants: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, NIKON CORPORATIONInventors: Shusuke Kanazawa, Motoshi Itagaki, Shohei Koizumi, Yoshiaki Kito, Katsuhiro Hatayama, Changhoon Shim
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Patent number: 12139444Abstract: A method for manufacturing a hydrocarbon compound from carbon dioxide, said method including: (a) a step of preparing an absorption-conversion catalyst that includes an oxide carrier, a first component supported on the oxide carrier and including at least one type of metal selected from the group consisting of alkali metals and alkaline earth metals, and a second component supported on the oxide carrier and including at least one type of metal selected from the group consisting of Ni, Fe, Co, Cu, and Ru; (b) a step of bringing the absorption-conversion catalyst and a carbon dioxide-including gas into contact under higher pressure than atmospheric pressure, and causing the carbon dioxide to be stored in the absorption-conversion catalyst; and (c) a step of bringing the absorption-conversion catalyst that has the carbon dioxide stored therein and a reducing gas into contact under higher pressure than atmospheric pressure, and obtaining the hydrocarbon compound.Type: GrantFiled: July 14, 2021Date of Patent: November 12, 2024Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Fumihiko Kosaka, Koji Kuramoto, Takehisa Mochizuki, Yanyong Liu, Shih-Yuan Chen, Hideyuki Takagi
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Publication number: 20240367967Abstract: A purpose of the present invention is to provide a pumpless high-pressure hydrogen supply system capable of supplying high-pressure hydrogen to a fuel cell vehicle, etc., when needed without using a compressor or the like, and a method for the system. The present invention relates to a high-pressure hydrogen supply system that obtains a mixed gas of hydrogen and carbon dioxide by dehydrogenation of formic acid using a complex catalyst, separates the hydrogen therefrom, and supplies the hydrogen at a pressure of 5 MPa or more. By obtaining the mixed gas at a pressure of 5 MPa or more by dehydrogenation and cooling the mixed gas by a separator while maintaining this pressure at 0.4 MPa or more, gas components other than hydrogen are phase separated as liquids or solids and removed. The separated hydrogen is raised in purity by pressure fluctuation adsorption, continuously sent to a pressure accumulator, and stored at a pressure of 70 MPa or more.Type: ApplicationFiled: August 3, 2022Publication date: November 7, 2024Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Hajime KAWANAMI, Yuichiro HIMEDA
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Publication number: 20240365523Abstract: A method of mounting electronic devices, including the steps of: irradiating with microwaves a board for mounting electronic devices including a base, a plurality of solder parts on the base, and a plurality of electronic devices corresponding to the plurality of solder parts placed in contact with the plurality of solder parts, the microwave irradiation is performed in a state in which electromagnetic shielding is performed for some of the plurality of solder parts; and heating and melting at least the solder parts for which the electromagnetic shielding is not performed by an action of a magnetic field of a standing wave formed by the microwave irradiation.Type: ApplicationFiled: April 28, 2022Publication date: October 31, 2024Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Sei UEMURA, Takashi NAKAMURA, Masateru NISHIOKA, Naoko UENO
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Publication number: 20240359169Abstract: The present invention provides an organic metal complex catalyst for an olefin metathesis reaction, which enables the achievement of a higher yield of a desired substance in an olefin metathesis reaction than the conventional catalysts. The organic metal complex catalyst according to the present invention has a structure represented by formula (1) and is used for an olefin metathesis reaction. In formula (1), M represents a coordination center and is an Ru atom or an ion thereof; R1, R2 and R3 may be the same as or different from each other and independently represent a substituent such as a hydrogen atom; R4, R5, R6 and R7 may be the same as or different from one another and independently represent a substituent such as a hydrogen atom; X represents a halogen atom; and R8 represents a substituent having 3 to 20 carbon atoms and having a ? bond.Type: ApplicationFiled: September 16, 2022Publication date: October 31, 2024Applicants: N.E. CHEMCAT CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Junchul Choi, Norihisa Fukaya, Kazuhiro Matsumoto, Tomoteru Mizusaki, Yukio Takagi, Yasuhiro Seki
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Patent number: 12121963Abstract: A single crystal particle powder having a crystal structure of TbCu7-type of the present invention is represented by the general formula: [Chemical Formula 1] (R1-zMz)Tx??(1) or the general formula: [Chemical Formula 2] (R1-zMz)TxNy??(2) and has a crystal structure of TbCu7-type, wherein R is at least one element selected from the group consisting of Sm and Nd, T is at least one element selected from the group consisting of Fe and Co, x is 7.0?x?10.0, y is 1.0?y?2.0, and z is 0.0?z?0.3.Type: GrantFiled: March 13, 2020Date of Patent: October 22, 2024Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Yusuke Hirayama, Akihide Hosokawa, Kenta Takagi
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Patent number: 12125926Abstract: The present invention realizes a hole-selective film provided with both hole selectivity and passivation characteristics. This production method for a semiconductor device is provided with a step for forming a titanium oxide film on a crystalline silicon layer by means of a thermal atomic layer deposition method, and a step for carrying out a hydrogen plasma process on the titanium oxide film.Type: GrantFiled: June 25, 2020Date of Patent: October 22, 2024Assignee: National institute of Advanced Industrial Science and TechnologyInventors: Takuya Matsui, Hitoshi Sai
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Publication number: 20240348250Abstract: Provided is a quantum circuit, a quantum computing element, a quantum computing system, and a quantum computing method with which physical reservoir computing with high learning efficiency becomes possible.Type: ApplicationFiled: June 20, 2022Publication date: October 17, 2024Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventor: Daisuke SAIDA
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Patent number: 12117343Abstract: Provided is a sample analysis system including: a droplet device configured to intermittently introduce a sample to a measurement region set in plasma; a light emission detection device configured to detect light emission in the measurement region at a detection timing, the detection timing being set at a predetermined cycle in advance; and an analysis device configured to analyze the sample based on the detected light emission, wherein the analysis device is provided with: a distribution computing unit configured to compute a time-spatial light intensity distribution based on the detected light emission, the time-spatial light intensity distribution being a distribution of a light intensity according to the detection timing, a position in the measurement region, and a wavelength component of the light emission; and a characteristic specifying unit configured to compute, from the time-spatial light intensity distribution, a feature amount that correlates with a sample characteristic indicating a property of tType: GrantFiled: December 10, 2020Date of Patent: October 15, 2024Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Yoshiyuki Teramoto, Masaki Torimura, Taizo Sano
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Publication number: 20240330702Abstract: A learning device includes at least one memory configured to store instructions; and at least one processor configured to execute the instructions to: perform reinforcement learning of control over a control target; use data used in the reinforcement learning to learn a model that shows the relationship between a state relating to the control target, control over the control target, and a temporal change in the state relating to the control target; and use the model and the result of the reinforcement learning to learn control over the control target.Type: ApplicationFiled: February 27, 2024Publication date: October 3, 2024Applicants: NEC CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Shumpei KUBOSAWA, Takashi Onishi, Yoshimasa Tsuruoka
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Publication number: 20240332281Abstract: A destructive breakdown mode that leads to the destruction of a device is suppressed, in the case where a gallium nitride-based high electron mobility transistor is used as a power device. A diode is connected in antiparallel to a HEMT, and this antiparallel connected diode is designed such that an avalanche breakdown occurs therein before the drain-source voltage, which is the difference between the drain potential applied to a drain electrode and the source potential applied to a source electrode, exceeds the withstand voltage of the HEMT.Type: ApplicationFiled: June 7, 2024Publication date: October 3, 2024Applicant: National Institute of Advanced Industrial Science and TechnologyInventors: Akira NAKAJIMA, Shinsuke HARADA, Kazutoshi KOJIMA
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Publication number: 20240318003Abstract: Provided is a compound with a high biomass ratio (preferably a compound with a biomass ratio of 100%) obtained by using a natural pigment and having excellent color developability and light resistance. The compound is a compound in which a natural pigment of curcumin is bound to an organic acid has a number average molecular weight (Mn) of 400 to 4,950.Type: ApplicationFiled: June 20, 2022Publication date: September 26, 2024Applicants: DIC Corporation, National Institute of Advanced Industrial Science and TechnologyInventors: Takahiko Ootsubo, Hitoshi Sekine, Atsushi Yamamoto, Koji Nemoto, Masaru Yoshida, Masanori Tamura
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Patent number: 12102007Abstract: This thermoelectric conversion module is formed by electrically connecting, by a conductive member, one end of an n-type thermoelectric conversion element having a negative Seebeck coefficient and having a half-Heusler structure to one end of a p-type thermoelectric conversion element containing an oxide having a positive Seebeck coefficient at a temperature of 25° C. or higher. The conductive member is connected to the n-type thermoelectric conversion element and the p-type thermoelectric conversion element through a connection layer containing a conductive metal comprising silver, and the connection layer is characterized by further containing an oxide to reduce the bond resistance between the n-type thermoelectric conversion element and/or the p-type thermoelectric conversion element.Type: GrantFiled: January 26, 2021Date of Patent: September 24, 2024Assignee: National Institute of Advanced Industrial Science and TechnologyInventor: Ryoji Funahashi
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Patent number: 12091583Abstract: The present invention provides a polymer compound peeling agent usable for peeling as many types of polymer compounds as possible and capable of reducing a burden required for a peeling treatment when a polymer compound having adhered to an adhesion object is peeled. The polymer compound peeling agent for peeling a polymer compound having adhered to an adhesion object contains a photoresponsive liquid crystal material having a phase structure reversibly transitioning between an isotropic phase and a liquid crystal phase due to photoisomerization based on irradiation lights of different wavelengths. When the polymer compound is adhered to the adhesion object, the photoresponsive liquid crystal material is contained in the polymer compound with the phase structure set to the isotropic phase, and the phase structure of the photoresponsive liquid crystal material is allowed to transition from the isotropic phase to the liquid crystal phase by photoisomerization based on the light irradiation.Type: GrantFiled: May 8, 2020Date of Patent: September 17, 2024Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, TAT INC.Inventors: Takahiro Yamamoto, Kyohei Takuno, Keita Hirokawa
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Modified carbon nanomaterial, nanocluster, substance delivery carrier and pharmaceutical composition
Patent number: 12071350Abstract: The present invention provides a nanocluster in which a carbon nanomaterial modified with a higher alkyl group or a higher alkenyl group is self-assembled.Type: GrantFiled: March 3, 2020Date of Patent: August 27, 2024Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, DAICEL CORPORATIONInventors: Eijiro Miyako, Yue Yu, Masahiro Nishikawa, Ming Liu, Takahiro Tei -
Publication number: 20240279842Abstract: A method for manufacturing a diamond substrate, the method being a method for producing a (111) oriented diamond crystal on an underlying substrate by epitaxial growth using hydrogen-diluted methane as a main source gas by a microwave plasma CVD method, a direct current plasma CVD method, a hot-filament CVD method, or an arc discharge plasma jet CVD method, in which a growth rate is less than 3.8 ?m/h. Thereby, a diamond crystal applicable to an electronic and magnetic device and a method to produce this crystal are stably provided in which the crystal with the NV axis with orientation and high-density NVC obtained by the CVD method under a predetermined condition is grown on a highly oriented (111) diamond base substrate obtained by the CVD method also under a predetermined condition.Type: ApplicationFiled: May 24, 2022Publication date: August 22, 2024Applicants: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Hitoshi NOGUCHI, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO
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Publication number: 20240282822Abstract: A semiconductor device, including an insulating film provided on a substrate, a chlorine-containing semiconductor layer provided adjacent to the insulating film, and a semiconductor region provided adjacent to the chlorine-containing semiconductor layer, wherein a chlorine concentration in the chlorine-containing semiconductor layer is 1.0×1020 atoms/cm3 or more and 1.0×1022 atoms/cm3 or less.Type: ApplicationFiled: May 21, 2021Publication date: August 22, 2024Applicants: KOKUSAI ELECTRIC CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Masahiro TAKAHASHI, Hideki HORITA, Tatsurou MAEDA
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Patent number: 12066507Abstract: Proposed is a phase shift introduction method, a structure, and a circuit device for eliminating or minimizing a risk associated with dissimilar materials, solving in principle a problem of mixing of a signal current and a control current that occurs due to DC connection of a phase shifter to a signal line, and stably and reliably providing a phase shift that is desired to be introduced without being adversely effected by noise generated by an ambient magnetic field, which is generated due to use of an external power supply. A structure according to the present invention includes a phase shifter 101 and a closed-loop circuit 103 that is directly used for computation or storage, and a quantum phase shift is generated in the closed-loop circuit 103 by using a fractional flux quantum captured by the phase shifter 101 that is DC-separated from the closed-loop circuit 103.Type: GrantFiled: November 26, 2020Date of Patent: August 20, 2024Assignees: National Institute of Advanced Industrial Science and Technology, NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Tokyo University of Science FoundationInventors: Yasumoto Tanaka, Hirotake Yamamori, Takashi Yanagisawa, Shunichi Arisawa, Taichiro Nishio
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Patent number: 12066433Abstract: Disclosed is an analytical method for analyzing a test substance contained in a measurement sample, the method comprising: generating a data set based on a plurality of optical spectra acquired from a plurality of locations in the measurement sample; inputting the data set into a deep learning algorithm having a neural network structure; and outputting information on the test substance, on the basis of an analytical result from the deep learning algorithm.Type: GrantFiled: March 4, 2022Date of Patent: August 20, 2024Assignees: SYSMEX CORPORATION, OSAKA UNIVERSITY, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Masaya Okada, Yuki Shimaoka, Shigeki Iwanaga, Kazuki Bando, Katsumasa Fujita, Yasunori Nawa, Satoshi Fujita