Patents Assigned to Institute of Electron Technology
  • Patent number: 12093117
    Abstract: A two-sided time-sharing driving and acquisition system based on dry contacts comprises k dry contacts, a processor, p acquisition circuits, and m driving circuits. The p acquisition circuits are evenly divided into two groups which are separately disposed at two sides of the k dry contacts. The m driving circuits are separately disposed at the two sides of the k dry contacts. A system fault detection method and the two-sided time-sharing driving and acquisition system have the following advantages: the state of input acquisition circuits and cables monitored in real time during system debugging or running, and faults caused by exceptions of the acquisition circuits and the cables can be reported in time.
    Type: Grant
    Filed: March 2, 2023
    Date of Patent: September 17, 2024
    Assignees: Jiangsu Huachuang Microsystem Company Limited, Nanjing Research Institute of Electronics Technology
    Inventors: Yue Wang, Yu Zheng, Kun Qi, Dingliang Xu, Yong Qi, Guoqiang He
  • Patent number: 12045621
    Abstract: A method for improving an accuracy of a loop branch prediction algorithm by a bypass circuit, comprising: adding a bypass circuit to a loop branch prediction algorithm; and for three pcs entering a pipeline, enabling pc1 fetched in an if0 stage to enter a hybrid branch predictor, and registering pc1; obtaining branch prediction information in an if1 stage, and making a comparison in an if2 stage to obtain a prediction result, registering the prediction result obtained in the if2 stage, and processing pc2 and pc3 in a same way.
    Type: Grant
    Filed: February 28, 2023
    Date of Patent: July 23, 2024
    Assignees: Jiangsu Huachuang Microsystem Company Limited, Nanjing Research Institute of Electronics Technology
    Inventors: Jiong Lou, Shiping Li, Sibo Yang, Ming Li, Wenjun Han, Zhiyong Lei
  • Publication number: 20230401068
    Abstract: A method for improving an accuracy of a loop branch prediction algorithm by a bypass circuit, comprising: adding a bypass circuit to a loop branch prediction algorithm; and for three pcs entering a pipeline, enabling pc1 fetched in an if0 stage to enter a hybrid branch predictor, and registering pc1; obtaining branch prediction information in an if1 stage, and making a comparison in an if2 stage to obtain a prediction result, registering the prediction result obtained in the if2 stage, and processing pc2 and pc3 in a same way.
    Type: Application
    Filed: February 28, 2023
    Publication date: December 14, 2023
    Applicants: Jiangsu Huachuang Microsystem Company Limited, Nanjing Research Institute of Electronics Technology
    Inventors: Jiong LOU, Shiping LI, Sibo YANG, Ming LI, Wenjun HAN, Zhiyong LEI
  • Publication number: 20230401119
    Abstract: A two-sided time-sharing driving and acquisition system based on dry contacts comprises k dry contacts, a processor, p acquisition circuits, and m driving circuits. The p acquisition circuits are evenly divided into two groups which are separately disposed at two sides of the k dry contacts. The m driving circuits are separately disposed at the two sides of the k dry contacts. A system fault detection method and the two-sided time-sharing driving and acquisition system have the following advantages: the state of input acquisition circuits and cables monitored in real time during system debugging or running, and faults caused by exceptions of the acquisition circuits and the cables can be reported in time.
    Type: Application
    Filed: March 2, 2023
    Publication date: December 14, 2023
    Applicants: Jiangsu Huachuang Microsystem Company Limited, Nanjing Research Institute of Electronics Technology
    Inventors: Yue WANG, Yu ZHENG, Kun QI, Dingliang XU, Yong QI, Guoqiang HE
  • Patent number: 11430625
    Abstract: The present disclosure provides an electron source operating method, the electron source including at least one emission site fixed on a tip, the emission site being a reaction product formed by metal atoms of a surface of the tip and gas molecules under an electric field, and the operating method comprises emitting electrons by controlling operating parameters of the electron source.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: August 30, 2022
    Assignee: 38th Research Institute, China Electronics Technology Group Corporation
    Inventors: Huarong Liu, Xueming Jin, Yuxuan Qi, Xuehui Wang, Yijing Li, Junting Wang, Chunning Zheng, Qing Qian, Tingting Luo, Zhonglin Dong
  • Patent number: 11373836
    Abstract: The present disclosure provides a method of manufacturing an electron source. The method includes forming one or more fixed emission sites on at least one needle tip, the fixed emission sites including a reaction product formed by metal atoms on a surface of the needle tip and gas molecules.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: June 28, 2022
    Assignee: 38th Research Institute, China Electronics Technology Group Corporation
    Inventors: Xuehui Wang, Junting Wang, Xianbin Hu, Dizhi Chen, Guang Tang, Huarong Liu, Lei Zheng, Qing Qian, Chunning Zheng, Guochao Wang
  • Patent number: 11315748
    Abstract: The present disclosure provides a method of regenerating an electron source, the electron source including at least one emission site fixed on a needle tip, and the emission site including a reaction product formed by metal atoms and gas molecules. The method includes regenerating the electron source in situ if an emission capability of the electron source satisfies a regeneration condition.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: April 26, 2022
    Assignee: 38th Research Institute, China Electronics Technology Group Corporation
    Inventors: Xuehui Wang, Zhao Huang, Junting Wang, Tingting Luo, Huarong Liu, Xingjia Yao, Yijing Li, Lei Zheng, Chunning Zheng
  • Patent number: 11189453
    Abstract: The present disclosure provides an electron source, including one or more tips, wherein at least one of the tips comprises one or more fixed emission sites, wherein at least one of the tips includes one or more fixed emission sites, wherein the emission sites includes a reaction product of metal atoms on a surface of the tip with gas molecules.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: November 30, 2021
    Assignee: 38th Research Institute, China Electronics Technology Group Corporation
    Inventors: Huarong Liu, Junting Wang, Xuehui Wang, Yuxuan Qi, Xianbin Hu, Xueming Jin, Zhao Huang, Dizhi Chen, Yijing Li, Youyin Deng
  • Publication number: 20190052304
    Abstract: A self-interference signal cancellation device and method are disclosed. A power divider divides a signal source into two paths, with one being connected to a transmit antenna and the other being connected to an input end of a self-interference signal reconstruction circuit. An output end of the self-interference signal reconstruction circuit is connected to a first input end of a combiner. An output end of a receive antenna is connected to a second input end of the combiner and a feedback regulating end of the self-interference signal reconstruction circuit, respectively. The transmit antenna and the receive antenna are arranged at different positions. According to the self-interference signal cancellation device of the present invention, by means of polarization isolation and separate arrangement between the transmit antenna and the receive antenna, high isolation between the antennas can be achieved, thereby reducing requirements for simulation elimination.
    Type: Application
    Filed: October 12, 2017
    Publication date: February 14, 2019
    Applicant: Southwest Electronics Technology Research Institute (China Electronics Technology Group
    Inventors: Kan WANG, Guangping CAO, Jianshe NAN, Tuo YANG
  • Patent number: 9023226
    Abstract: The present disclosure provides a method for manufacturing a particle source comprising: placing a metal wire in vacuum, introducing active gas, adjusting a temperature of the metal wire and applying a positive high voltage V to the metal wire to generate at a side of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than a field evaporation electric field of material for the metal wire, so that metal atoms at the top of the metal wire are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: May 5, 2015
    Assignee: 38th Research Institute, China Electronics Technology Group Corporation
    Inventors: Huarong Liu, Ping Chen
  • Patent number: 9017562
    Abstract: The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: April 28, 2015
    Assignee: 38th Research Institute, China Electronics Technology Group Corporation
    Inventor: Huarong Liu
  • Publication number: 20130112138
    Abstract: The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.
    Type: Application
    Filed: December 26, 2012
    Publication date: May 9, 2013
    Applicant: 38th Research Institute, China Electronics Technology Group Corporation
    Inventor: 38th Research Institute, China Electronics Technology Group Corporation
  • Patent number: 7582875
    Abstract: A monolithic active pixel dosimeter, provided with at least a sensing cell, having at least a junction sensing element. The junction sensing element includes a sensing region, having a first type of conductivity, and a charge collecting region, contiguous to the sensing region and having a second type of conductivity. The sensing cell further includes an ohmic region at least partially overlapping and extending laterally outside the charge collecting region, and an annular insulating region, abutting the ohmic region, so as to form an insulating junction surrounding both the ohmic region and the charge collection region.
    Type: Grant
    Filed: May 5, 2005
    Date of Patent: September 1, 2009
    Assignees: Universitaet Karlsruhe., Akademia Gomiczo-Hutnicza, Université Louis Pasteur, Centre National de la Recherche Scientifique, Institute of Electron Technology, Fondazione per Adroterapia Oncologica - Tera, Universite' de Geneve, Instytut Fizyki Jadrowej Im H Niewodniczanskiego
    Inventors: Massimo Caccia, Leopoldo Conte, Mario Alemi, Chiara Cappellini, Antonello Luigi Airoldi, Carla Bianchi, Raffaele Novario, Wim De Boer, Eugene Grigoriev, Halina Niemiec, Wojciech Kucewicz, Francesco Cannillo, Gilles Clauss, Claude Colledani, Grzegorz Deptuch, Wojciech Dulinski, Piotr Grabiec, Jacek Marczewski, Krzysztof Domanski, Bohdan Jaroszewicz, Krzysztof Kucharski, Laura Badano, Omella Ferrando, Georg Popowski, Agnieszka Zalewska, Adam Czermak