Abstract: A method for manufacturing a semiconductor device includes providing a substrate, forming a pseudo-gate stack and sidewalls on the substrate, forming an S/D region on both sides of the pseudo-gate stack, and forming a stop layer and a first interlayer dielectric layer covering the entire semiconductor device; removing part of the stop layer to expose the pseudo-gate stack, and further removing the pseudo-gate stack to expose the channel region; etching the channel region to form a groove structure; forming a new channel region to flush with the upper surface of the substrate, wherein the new channel region includes a buffer layer, a Ge layer, and a Si cap layer; forming a gate stack. Accordingly, the present application also discloses a semiconductor device. The present application can effectively improve the carrier mobility and the performance of the semiconductor device by replacing Si with Ge to form a new channel region.

Abstract: The present invention relates to a transistor and the method for forming the same. The transistor of the present invention comprises a semiconductor substrate; a gate dielectric layer formed on the semiconductor substrate; a gate formed on the gate dielectric layer; a channel region under the gate dielectric layer; and a source region and a drain region located in the semiconductor substrate and on respective sides of the channel region, wherein at least one of the source and drain regions comprises a set of dislocations that are adjacent to the channel region and arranged in the direction perpendicular to a top surface of the semiconductor substrate, and the set of dislocations comprises at least two dislocations.