Abstract: It is provided a method for forming a semiconductor device comprising: forming a material layer which exposes dummy gates and sidewall spacers and fills spaces between two adjacent gate stacks, and the material of the material layer is the same as the material of the dummy gate; removing the dummy gates and the material layer to form recesses; filling the recesses with a conductive material, and planarizing the conductive material to expose the sidewall spacers; breaking the conductive material outside the sidewall spacers to form at least two conductors, each of the conductors being only in contact with the active region at one side outside one of the sidewall spacers, so as to form gate stack structures and first contacts. Besides, a semiconductor device is provided. The method and the semiconductor device are favorable for extending process windows in forming contacts.