Patents Assigned to Institutt for Enerfiteknikk
  • Surface Passivation of Silicon Based Wafers
    Publication number: 20090056800
    Abstract: The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.
    Type: Application
    Filed: April 12, 2006
    Publication date: March 5, 2009
    Applicants: Renewable Energy Corporation ASA, Universitetet I Oslo, Institutt for Enerfiteknikk
    Inventors: Alexander Ulyashin, Andreas Bentzen, Bengt Svensson, Arve Holt, Erik Sauar