Abstract: Systems and methods for reducing write error rate in MeRAM applications in accordance with various embodiments of the invention are illustrated. One embodiment includes a method for a writing mechanism for a magnetoelectric random access memory cell, the method including applying a voltage of a given polarity for a given period of time across a magnetoelectric junction bit of the magnetoelectric random access memory cell, wherein application of the voltage of the given polarity across the magnetoelectric junction bit reduces the perpendicular magnetic anisotropy and magnetic coercivity of the ferromagnetic free layer through a voltage controlled magnetic anisotropy effect, and lowering the applied voltage of the given polarity before the end of the given period of time, wherein the given period of time is approximately half of a precessional period of the ferromagnetic free layer.

Abstract: Systems and methods for reducing write error rate in MeRAM applications in accordance with various embodiments of the invention are illustrated. One embodiment includes a method for a writing mechanism for a magnetoelectric random access memory cell, the method including applying a voltage of a given polarity for a given period of time across a magnetoelectric junction bit of the magnetoelectric random access memory cell, wherein application of the voltage of the given polarity across the magnetoelectric junction bit reduces the perpendicular magnetic anisotropy and magnetic coercivity of the ferromagnetic free layer through a voltage controlled magnetic anisotropy effect, and lowering the applied voltage of the given polarity before the end of the given period of time, wherein the given period of time is approximately half of a precessional period of the ferromagnetic free layer.

Abstract: Reverse pulse schemes for reducing write error rate in magnetoelectric random access memory applications can be implemented in many different ways in accordance with various embodiments of the invention. One embodiment includes a method for a writing mechanism for a magnetoelectric random access memory cell, the method including applying a voltage of a given polarity for a period of time across a magnetoelectric junction bit of the magnetoelectric random access memory cell and applying a voltage of a polarity opposite the given polarity across the magnetoelectric junction bit at the end of the application of the voltage of the given polarity, wherein application of the voltage of the given polarity across the magnetoelectric junction bit reduces the perpendicular magnetic anisotropy and magnetic coercivity of the ferromagnetic free layer through a voltage controlled magnetic anisotropy effect.

Abstract: Systems and methods in accordance with embodiments of the invention implement select devices constructed from 2D materials. In one embodiment, a crossbar memory system includes: a first set of connection lines; a second set of connection lines; and an array of memory cells, each memory cell including: a select device; and a memory device; where each memory cell is coupled to a unique combination of: at least one connection line from the first set of connection lines, and at least one connection line from the second set of connection lines; and where at least one select device includes a 2D material.

Abstract: Systems and methods in accordance with embodiments of the invention implement efficient magnetoelectric junctions (MEJs). In one embodiment, an MEJ system includes: at least one MEJ, and a first layer including a piezoelectric material disposed proximate at least one MEJ; where the straining of at least some portion of the first layer including a piezoelectric material causes at least some portion of at least one MEJ to experience a stress and a related strain.

Abstract: Systems and methods in accordance with embodiments of the invention implement select devices constructed from 2D materials. In one embodiment, a crossbar memory system includes: a first set of connection lines; a second set of connection lines; and an array of memory cells, each memory cell including: a select device; and a memory device; where each memory cell is coupled to a unique combination of: at least one connection line from the first set of connection lines, and at least one connection line from the second set of connection lines; and where at least one select device includes a 2D material.

Abstract: Embodiments of the invention implement MEJs having improved read-write characteristics. In one embodiment, an MEJ includes: ferromagnetic fixed and free layers, a dielectric layer interposed between the ferromagnetic layers, and an additional dielectric layer proximate the free layer, where the fixed layer is magnetically polarized in a first direction, where the free layer has a first easy axis that is aligned with the first direction, and where the MEJ is configured such that when subject to a potential difference, the magnetic anisotropy of the free layer is altered such that the relative strength of the magnetic anisotropy along a second easy axis that is orthogonal to the first easy axis, compared to the strength of the magnetic anisotropy along the first easy axis, is magnified during the application of the potential difference, where the extent of the magnification is enhanced by the presence of the additional layer.