Abstract: A light emitting device includes a window over a light emitting pixel. A light reflection performance of the light emitting pixel to an incoming ambient light is configured by the window to be appeared to have at least two regions, wherein one region of the at least two regions has a smaller transmittance to the incoming ambient light than the other.

Abstract: A circuit includes an electroluminescent (EL) device, a transistor, a first capacitor and a second capacitor. The transistor includes a gate coupled to a first node and a first terminal coupled to a second node. The first capacitor is coupled between a supply voltage and the first node. The second capacitor is coupled between the first node and the second node. The first capacitor and the second capacitor are configured to establish a compensation voltage associated with a threshold voltage of the transistor at the gate of the transistor in response to a first control signal, and establish the compensation voltage at the first terminal of the transistor in response to a second control signal. The transistor is configured to pass a current through the EL device. Moreover, the current has a magnitude independent of the threshold voltage of the transistor.

Abstract: A method of manufacturing a light emitting device includes providing a substrate, forming a plurality of photosensitive bumps over the substrate, forming a photosensitive layer over the plurality of photosensitive bumps, forming a buffer layer between the photosensitive layer and the plurality of photosensitive bumps, patterning the photosensitive layer to form a recess through the photosensitive layer to expose a surface, disposing an organic emissive layer on the surface, forming a metal containing layer over the organic emissive layer, and removing the patterned photosensitive layer.

Abstract: A circuit includes an electroluminescent (EL) device, a transistor, a first capacitor and a second capacitor. The transistor, coupled between a supply voltage and the EL device, includes a gate coupled to a first node and a first terminal coupled to a second node. The first capacitor, coupled between the first node and the second node, is configured to reset the gate of the transistor to the supply voltage in response to a first control signal. The second capacitor, including a first end coupled to the second node and a second end to receive a second control signal, is configured to establish at the first terminal of the transistor a compensation voltage associated with a threshold voltage of the transistor in response to the second control signal. The transistor is configured to pass a current through the EL device. The current has a magnitude independent of the threshold voltage of the transistor.

Abstract: A circuit for fingerprint detection is disclosed. The circuit includes a transistor and a capacitor. The transistor includes a gate configured to, in response to a touch event of an object, sense a capacitance associated with the object. The capacitor, coupled between a first node and a second node, is configured to establish a voltage across the first node and the second node in response to a first control signal, and establish a compensation voltage at the first node in response to a second control signal. The transistor is configured to flow a current therethrough in response to a third control signal. The current has a magnitude independent of the threshold voltage of the transistor due to the compensation voltage.

Abstract: A touch sensor includes first sensing lines and second sensing lines. The first sensing lines are arranged in a first direction, and each of the first sensing lines includes one or more first mesh electrode. The second sensing lines are arranged in a second direction and intersecting the plurality of first sensing lines, and each of the second sensing lines includes one or more second mesh electrode. Each of the first mesh electrode and the second mesh electrode includes conductive frames and bridging electrodes. The conductive frames are apart from each other, wherein each of the conductive frames has an aperture. Each of the bridging electrodes has two ends connected to two respective ones of the conductive frames, and a junction of any one of the bridging electrodes and the respective conductive frames is a three-way junction.

Abstract: The present invention discloses a vertical thin film transistor and a method for fabricating the same. A vertical current path is formed in a vertical direction of the thin film transistor, thereby increasing the channel length for a given layout area. The design for the pixel circuit plays an important role in managing the compensation process instability. A relatively long channel is usually needed for driving a thin film transistor so as to improve electrical stability of components, regardless of the compensation circuit used. The present invention provides a vertical thin film transistor having a top gate, such that a current path is formed in the Z direction in addition to the current paths in the X-Y direction. Such scheme increases the effective channel length for a given area, thereby reducing the required layout area. Also, the short-channel effect can be reduced for a gate length of 2 ?m.

Abstract: An electroluminescent (EL) display is disclosed. The EL display includes pixel units arranged in a matrix of N rows and M columns, N and M being natural numbers, scan lines configured to select pixel units of interest, data lines configured to provide data to selected pixel units, and a control line E_k configured to control immediately adjacent rows of pixel units coupled to (2k?1)-th and 2k-th scan lines, respectively, k being a natural number from 1 to N/2.

Abstract: A method of forming a device includes emitting a coherent light beam and providing a mask including a region transparent to the light beam. The method further includes projecting the light beam on a photosensitive layer through the transparent region of the mask. The method further includes forming a recess in the photosensitive layer, wherein the recess corresponds to a position of the transparent region of the mask. The method further includes filling an organic light emitting material in the recess.

Abstract: A pixel compensation circuit is arranged for compensating the critical parameter associated with the electrical properties of the components in thin film transistors of an active matrix organic light emitting diode display or similar illumination systems to avoid uneven brightness resulted from the voltage drop effect. The pixel compensation circuit is defined in a sub-pixel area, wherein there are eight thin film transistors and one capacitor, and the circuit is operated by two control signals. In contrast, three control signals are required in the conventional technologies. The fewer control signals are required, which is benefit to the flexibility of the layout and design of specification.

Abstract: An electroluminescent display includes an array of pixels, each including a capacitor, an electroluminescent (EL) device, a first group of transistors and a second group of transistors. The first group of transistors, coupled between a first terminal of the capacitor and a data input, provides a compensation voltage according to data received at the data input. The compensation voltage is composed of a threshold voltage of each of the first group of transistors. The second group of transistors passes a current through the EL device that has a magnitude independent of a threshold voltage of the second group of transistors. In a first phase, a voltage level at the first terminal of the capacitor is reset. In a second phase, data is stored in the capacitor and received via the first group of transistors, and the compensation voltage is generated. In a third phase, the current is passed.

Abstract: A method of manufacturing a light emitting device includes providing a substrate and forming a plurality of photosensitive bumps over the substrate. The method also includes forming a photosensitive layer over the plurality of photosensitive bumps and patterning the photosensitive layer to form a recess through the photosensitive layer to expose a surface. The method also includes disposing an organic emissive layer on the surface, and removing the patterned photosensitive layer.

Abstract: A display panel includes a display device, a first anti-reflection layer and a cover layer. The first anti-reflection layer is disposed over the display device, wherein the first anti-reflection layer comprises a first structural layer including a plurality of first protrusion structures opposite to the display device. The cover layer is disposed over the first anti-reflection layer.

Abstract: The present disclosure provides an organic electroluminescent compound represented by the formula (I): wherein R1, R2, R3 and R4 each independently represents a substituted or unsubstituted (C6-C30) aryl group, a substituted or unsubstituted 3- to 30-membered heteroaryl group, —NR5R6, —SiR7R8R9, —SR10, —OR11, a cyano group, a nitro group, or a hydroxyl group. The present disclosure further provides an organic electroluminescent device comprising the organic electroluminescent compound represented by the formula (I).