Abstract: An integrated passive component device in which an anodized metal capacitor and a HTD capacitor are fabricated with a protective conductive metal layer disposed between the dielectric layer of the anodized metal capacitor and the dielectric layer of the HTD capacitor. The protective conductive metal layer helps to prevent process chemicals and conditions used to fabricate the dielectric layer of the HTD capacitor from adversely affecting the dielectric layer of the anodized metal capacitor. The anodized metal capacitor and the high temperature deposition capacitor are fabricated on the same substrate using only one masking operation.

Abstract: A thin film capacitor and methods for forming the same are described. The capacitor has dielectric layer with a first face, a second face, and at least one edge. The first terminal of the capacitor covers at least a portion of the first face of the dielectric layer, covers at least a portion of one edge of the dielectric layer, and covers a portion of the second face of the dielectric layer. The second terminal of the capacitor covers a portion of the second face of the dielectric layer and does not contact the first terminal. A method for forming the thin film capacitor includes hard baking photoresist at an elevated temperature and anodizing an exposed metal area using the photoresist as a mask.