Patents Assigned to Integrated Magnetoelectronics
  • High GMR structure with low drive fields
    Patent number: 8619467
    Abstract: Multi-period structures exhibiting giant magnetoresistance (GMR) are described in which the exchange coupling across the active interfaces of the structure is ferromagnetic.
    Type: Grant
    Filed: February 18, 2011
    Date of Patent: December 31, 2013
    Assignee: Integrated Magnetoelectronics
    Inventors: E. James Torok, Richard Spitzer, David L. Fleming, Edward Wuori
  • Scalable nonvolatile memory
    Patent number: 8300455
    Abstract: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: October 30, 2012
    Assignee: Integrated MagnetoElectronics
    Inventors: E. James Torok, David Leslie Fleming, Edward Wuori, Richard Spitzer
  • Scalable nonvolatile memory
    Patent number: 7911830
    Abstract: Various magnetoresistive memory cells and architectures are included which enable nonvolatile memories having high information density.
    Type: Grant
    Filed: May 14, 2008
    Date of Patent: March 22, 2011
    Assignee: Integrated MagnetoElectronics
    Inventors: E. James Torok, David Leslie Fleming, Edward Wuori, Richard Spitzer
  • Magnetoresistive trimming of GMR circuits
    Patent number: 6469927
    Abstract: Methods and apparatus are described relating to an electronic device which includes at least one configurable resistive element. Each such configurable resistive element includes at least one multi-layer thin film element exhibiting giant magnetoresistance. The resistance value of each configurable resistive element is configurable over a resistance value range by application of at least one magnetic field which manipulates at least one magnetization vector associated with the thin film element. One embodiment is an adjustable output gate. Another embodiment is a differential amplifier in which the gain of each channel is adjustable.
    Type: Grant
    Filed: June 18, 2001
    Date of Patent: October 22, 2002
    Assignee: Integrated Magnetoelectronics
    Inventors: Richard Spitzer, E. James Torok
  • All-metal, giant magnetoresistive, solid-state component
    Patent number: 6031273
    Abstract: A solid-state component is described which includes a network of thin-film elements. At least one thin-film element exhibits giant magnetoresistance. The network has a plurality of nodes, each of which represents a direct electrical connection between two of the thin-film elements. First and second ones of the plurality of nodes comprise power terminals. Third and fourth ones of the plurality of nodes comprise an output. A first conductor is inductively coupled to the at least one thin-film element for applying a first magnetic field thereto.
    Type: Grant
    Filed: December 8, 1998
    Date of Patent: February 29, 2000
    Assignee: Integrated Magnetoelectronics
    Inventors: E. James Torok, Richard Spitzer
  • All-metal giant magnetoresistive solid-state component
    Patent number: 5929636
    Abstract: A solid-state component is described which includes a network of thin-film elements. At least one thin-film element exhibits giant magnetoresistance. The network has a plurality of nodes, each of which represents a direct electrical connection between two of the thin-film elements. First and second ones of the plurality of nodes include power terminals. Third and fourth ones of the plurality of nodes comprise an output. A first conductor is inductively coupled to the at least one thin-film element for applying a first magnetic field thereto.
    Type: Grant
    Filed: April 30, 1997
    Date of Patent: July 27, 1999
    Assignee: Integrated Magnetoelectronics
    Inventors: E. James Torok, Richard Spitzer