Abstract: Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and/or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.

Abstract: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.

Abstract: Multi-period structures exhibiting giant magnetoresistance (GMR) are described in which the exchange coupling across the active interfaces of the structure is ferromagnetic.

Abstract: Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.

Abstract: A multi-layered memory cell is described having a plurality of magnetic layers, each of the magnetic layers being for magnetically storing one bit of information. A plurality of access lines are integrated with the plurality of magnetic layers and configured such that the bits of information stored in each of selected ones of the magnetic layers may be independently accessed using selected ones of the plurality of access lines and the giant magnetoresistive effect. The memory cell further includes at least one keeper layer. The magnetic layers, the access lines, and the at least one keeper layer form a substantially closed flux structure.

Abstract: Magnetic random-access memory (RAM) cells and arrays are described based on magnetoresistive thin-film structures.