Abstract: A composite substrate with a degree of porosity, optionally of a carbon based material, and at least a first layer over coating the first portion by a predetermined amount, including at least a portion of the interior surfaces of the first portion and reducing the porosity of the composite substrate by a predetermined amount. The structure and composition of the composite substrate enable functionalities in different classes of completed devices ranging from energy conversion and storage, chemical processing and filtration.

Abstract: A removable, or reusable, template suitable for forming three dimensional structures of various devices ranging from photovoltaics to electrodes for electrochemical cells is disclosed.

Abstract: A photovoltaic device on a non-semiconductor substrate is disclosed. The device comprises two semiconductor layers forming an active region; at least one of the semiconductor layers is formed by a high-purity plasma spray process; optional layers include one or more barrier layers, a cap layer, a conductive and/or metallization layer, an anti-reflection layer, and distributed Bragg reflector. The device may comprise multiple active regions.

Abstract: A method for manufacturing a photovoltaic device comprises the steps choosing a substrate with a conductive layer; depositing a non-conductive layer; imprinting a structure comprising features into the non-conductive layer; and depositing an active layer operable in the photovoltaic device; wherein the active layer is in electrical contact with the conductive layer through a feature in the imprinted layer.

Abstract: The invention discloses a method and system for continuous deposition of thin films by chemical vapor reaction for the purposes of semiconductor device fabrication; in some embodiments a device is a photovoltaic device.

Abstract: A composite substrate comprising a graphitic layer and a semiconductor layer for a photovoltaic device is disclosed.

Abstract: Silicon particles, including powder suitable for plasma spraying semiconductor devices, is formed by milling by a roller mill including silicon rollers and/or plates and having feed and collection systems comprising silicon and operated in a controlled ambient.

Abstract: A solar cell comprises a recrystallized layer wherein the recrystallized layer has at least one crystal grain at least 90% of the size of the illuminated area of the solar cell.

Abstract: The instant invention discloses compositions for source material for a plasma spray gun comprising a Group IV based powder, optionally, a Group IV based liquid, optionally, a gas containing Group IV based gases, optionally a dopant, and a carrier gas, optionally, inert.

Abstract: A photovoltaic device on a low-cost, conductive silicon layer is disclosed. The device comprises two semiconductor layers forming an active region; optional layers include “heterojunction layers”, one or more barrier layers, a cap layer, a conductive and/or metallization layer, an anti-reflection layer, and distributed Bragg reflector. The device may comprise multiple active regions.

Abstract: The invention relates generally to preparation of a substrate for use in a photovoltaic device by application of a filling material and subsequent planarization of the top surface; optionally, a barrier layer is added.

Abstract: An inline process for manufacturing a photovoltaic device on a removable substrate is disclosed. The process discloses two semiconductor layers forming an active region; at least one of the semiconductor layers is formed by a high-purity plasma spray process; optional layers include a release layer, one or more barrier layers, a cap layer, a conductive support layer, a mechanical support layer, an anti-reflection layer, and distributed Bragg reflector. The process may also be used to form multiple active regions.

Abstract: A solar cell comprises a recrystallized active layer wherein the active layer has preferred characteristics.

Abstract: The instant invention discloses a method of generating silicon powder aerosol to maintain cleanliness of the silicon powder during the feed process which utilizes an carrier gas, optionally, inert, and non-contaminating feed line to a plasma spray gun.

Abstract: A photovoltaic device on a non-semiconductor substrate is disclosed. The device comprises two semiconductor layers forming an active region; at least one of the semiconductor layers is formed by a high-purity plasma spray process; optional layers include one or more barrier layers, a cap layer, a conductive and/or metallization layer, an anti-reflection layer, and distributed Bragg reflector. The device may comprise multiple active regions.

Abstract: An inline process for manufacturing a photovoltaic device on a removable substrate is disclosed. The process discloses two semiconductor layers forming an active region; at least one of the semiconductor layers is formed by a high-purity plasma spray process; optional layers include a release layer, one or more barrier layers, a cap layer, a conductive support layer, a mechanical support layer, an anti-reflection layer, and distributed Bragg reflector. The process may also be used to form multiple active regions.

Abstract: A method of jet milling silicon powder in which silicon pellets are fed into a jet mill producing a gas vortex in which the pellets are entrained and pulverized by collisions with each other or walls of the milling chamber. The chamber walls are advantageously formed of high-purity silicon as are other parts contacting the unground pellets or ground powder. The pellets and chamber parts may be formed of electronic grade silicon but polycrystalline silicon may be used for chamber parts. Additionally, the particle feed tube in which the particles are entrained in a gas flow and the vortex finder operating as the outlet at the center of the vortex may be formed of silicon. The milling and feed gas may be nitrogen supplied from a liquid-nitrogen tank lined with stainless steel. The feed pellets may be formed by chemical vapor deposition.

Abstract: A plasma spray gun configured to spray semiconductor grade silicon to form semiconductor structures including p-n junctions includes silicon parts such as the cathode or anode or other parts facing the plasma or carrying the silicon powder having at least surface portions formed of high purity silicon. The semiconductor dopant may be included in the sprayed silicon.