Abstract: Provided is a memory device, including a plurality of memory banks. Each of the memory banks includes a memory array and a driver circuit. The driver circuit is coupled to the memory array, arranged to operably write data to the memory array according to write signals. The driver circuit includes a plurality of row driver circuits each coupled to a row of the memory cells. A global driver power circuit coupled to the row driver circuits in the plurality of memory banks to provide a global driver power. Each of the memory banks further includes a local driver power circuit coupled to respective row driver circuits in each of the memory banks to provide a local driver power. The local driver power circuit includes a first P-type MTCMOS coupled to a supply voltage and a control signal, controlled by the control signal to provide a local multi-threshold power signal to the respective row driver circuits.

Abstract: A memory core characteristic screening method includes the following steps. A command signal transmitting step includes configuring a processing module to transmit a command signal to a memory device. A first internal operating step includes configuring the memory device to operate a first operation to one of a word line, a bit line pair and a column line after a first strobe signal delay time according to a first command. A second internal operating step includes configuring the memory device to operate a second operation to another one of the word line, the bit line pair and the column line after a second strobe signal delay time according to a second command. A memory core characteristic screening step includes screening a memory core characteristic by shorting a timing between the first strobe signal delay time and the second strobe signal delay time.

Abstract: A semiconductor integrated circuit is provided, including: a first switch circuit; a logic circuit, coupled to the first switch circuit, a first floating diffusion point being defined between the first switch circuit and the logic circuit; a second switch circuit, coupled to the logic circuit, a second floating diffusion point being defined between the second switch circuit and the logic circuit; and a voltage holding circuit, coupled to the first floating diffusion point and the second floating diffusion point, and used to adjust the voltages of the floating diffusion points. The voltage holding circuit increases or decreases the voltage values of the first floating diffusion point and the second floating diffusion point. Thereby, the influence of long recovery time on the semiconductor integrated circuit is improved, and the stability is ensured.

Abstract: A memory interface circuitry includes a clock generator to convert the first clock signal into a second clock signal, a state machine to generate a test signal according to the second clock signal, a data pattern generator to generate a plurality of pre-defined data, a read register to sequentially output the plurality of pre-defined data, an I/O interface to capture a plurality of data from the plurality of pre-defined data according to a write strobe signal, a write register to receive and store the plurality of data from the I/O interface, and a comparator to compare the plurality of pre-defined data with the plurality of data to generate a test result. The test result is configured to verify an operation of the I/O interface.

Abstract: The present invention relates to a signal synchronization adjustment method and a signal synchronization adjustment circuit, for applying to data reading according to a reference clock signal between a memory controller and a dynamic random access memory in an electronic device. First, the memory controller triggers a command signal to the dynamic random access memory; then, the dynamic random access memory delays for a column selection signal latency time according to a first rising edge of the reference clock signal, and then triggers a column selection signal; after that, the dynamic random access memory delays for an internal data strobe signal latency time, and then triggers an internal data strobe signal; finally, the dynamic random access memory delays for an external data strobe signal latency time, and then triggers an external data strobe signal. The signal synchronization adjustment circuit is applied to the signal synchronization adjustment method.

Abstract: A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.

Abstract: A method of forming a package structure includes an etching step, a laser step, a plating step and a singulation step. In the etching step, a plurality of cutting streets of a leadframe are etched. In the laser step, a plastic package material covering on each of the cutting streets is removed via a laser beam. In the plating step, a plurality of plating surfaces are disposed on a plurality of areas of the leadframe without the plastic package material. In the singulation step, the cutting streets of the leadframe are cut to form the package structure.

Abstract: A power management circuit in a low-power double data rate memory is configured to manage a plurality of power supplies memory according to a reference voltage. A low dropout regulator has a first transmitting terminal and a second transmitting terminal. The low dropout regulator adjusts a voltage difference between a first voltage and a second voltage according to the reference voltage. A power network structure is electrically connected to the low dropout regulator. A first power network circuit has a first connecting point, a grid shape and a first unit network space. A second power network circuit has a second connecting point, another grid shape and a second unit network space. The second connecting point is separated from the first connecting point by a distance. The distance is smaller than or equal to one of the first unit network space and the second unit network space.

Abstract: A controlling circuit for a low-power low dropout regulator includes the low-power low dropout regulator, a current load detector and a bias current circuit. The low-power low dropout regulator has a first transmitting terminal and a second transmitting terminal. The first transmitting terminal is configured to transmit a first voltage, the second transmitting terminal is configured to transmit a second voltage, and the low-power low dropout regulator adjusts a voltage difference between the first voltage and the second voltage. The current load detector detects the first voltage and the second voltage, and compares the reference voltage with the second voltage to generate a detected signal. The bias current circuit generates a bias voltage and a reference current, and the low-power low dropout regulator dynamically adjust a bias current of the low-power low dropout regulator, so that the bias current is positively correlated with the reference current.

Abstract: A method of forming a package structure includes an etching step, a laser step, a plating step and a singulation step. In the etching step, a plurality of cutting streets of a leadframe are etched. In the laser step, a plastic package material covering on each of the cutting streets is removed via a laser beam. In the plating step, a plurality of plating surfaces are disposed on a plurality of areas of the leadframe without the plastic package material. In the singulation step, the cutting streets of the leadframe are cut to form the package structure.

Abstract: A method of forming a FinFET stack gate memory includes a nitride film forming step, a nitride film is formed on a memory cell area with a shallow trench isolation (STI) structure; a stripping step, a portion of the nitride film is stripped, the other portion of the nitride film is remained at the STI structure, and a STI oxide is disposed in the STI structure; a floating gate (FG) structure forming step, a tunnel oxide is disposed, and a first polysilicon is disposed to form a FG structure; an oxide-nitride-oxide (ONO) layer disposing step, a portion of the STI oxide is stripped, and an ONO layer is disposed; a removing step, a portion of the ONO layer is removed; a control gate (CG) structure forming step, a portion of the FG structure is removed, and a second polysilicon is disposed to form a CG structure.

Abstract: A method for detecting an abnormal die includes providing a wafer, determining the surrounding dies in accordance with a position of a target die on the wafer, calculating a difference between a value of an electrical characteristic of each of the surrounding dies and a value of an electrical characteristic of the target die to obtain the electrical characteristic deviations, ranking the absolute values of the electrical characteristic deviations to generate a ranking result, and determining the characteristic-related dies from the surrounding dies in accordance with the ranking result, determining a target-related area in accordance with the position of the target die, determining the target-related die from the characteristic-related dies in accordance with the target-related area and determining whether the target die is qualified in accordance with the target-related die.

Abstract: A memory inspecting method and a memory inspecting system are proposed. The memory inspecting system includes a testing machine and a computer system. The memory inspecting method includes: performing a first data retention time test on a plurality of memory chips to obtain a plurality of first qualified memory chips; performing a second data retention time test on the first qualified memory chips to obtain a plurality of second qualified memory chips; performing a third data retention time test on the second qualified memory chips to obtain a plurality of third qualified memory chips. Performing a statistical analysis step on the third qualified memory chips according to a first data retention time, a second data retention time and a third data retention time of each of the third qualified memory chips is for obtaining at least one final qualified memory chip.

Abstract: An internal latch circuit having a plurality of low initial value D flip-flops, a plurality of high initial value D flip-flops, an internal latch signal generating circuit and a NAND gate, and a method for generating latch signal thereof is provided. First, an input delay signal in response to a clock signal is generated. Then, a first internal input signal, a first reverse internal input signal, a second internal input signal, and a second reverse internal input signal are generated by using the low initial value D flip-flops and the high initial value D flip-flops, based on the internal data strobe signal and in response to the input delay signal, and are transmitted to the internal latch signal generating circuit. Then, the internal latch signal generating circuit outputs the first reverse pre-output signal and the second reverse pre-output signal. Finally, an internal latch signal is generated through a NAND gate.

Abstract: A method in a clocked integrated circuit receiving an input clock signal having a clock frequency and a command signal for accessing a memory element in the clocked integrated circuit. The method detects the input clock signal having a clock frequency above or below a frequency threshold. The method generates a clock detect output signal having a first logical state in response to the clock frequency being below the frequency threshold and generates the clock detect output signal having a second logical state in response to the clock frequency being above the frequency threshold. The method delays the command signal by a first timing latency to generate a timing adjusted control signal where the first timing latency is one or more clock periods of the input clock signal. Finally, the method adjusts the first timing latency in response to the clock detect output signal.

Abstract: A PVT-independent fixed delay circuit includes a circuit structure that has a current generator and a multi-level inverter-based time delay unit. The inverter-based time delay unit has at least two NMOS transistors M5, M6, and at least two PMOS transistors M7, M8. The current generator has a circuit structure including at least two NMOS transistors M1, M2, at least two PMOS transistors M3, M4 and a resistor RS.

Abstract: A memory device incorporates a chip enable protection circuit implementing a secured chip enable method providing a passcode protected enable scheme with secure chip disable for the memory device. The passcode can be programmed at manufacturing or programmed by the user. Memory device access is enabled by receiving the correct passcode and memory device access is denied when the wrong passcode is entered. Furthermore, the secured chip enable method implements secure chip disable where the memory device is disabled in response to receiving wrong passcodes repeatedly for a maximum number of tries.

Abstract: A method in a clocked integrated circuit receiving an input clock signal having a clock frequency and a command signal for accessing a memory element in the clocked integrated circuit. The method detects the input clock signal having a clock frequency above or below a frequency threshold. The method generates a clock detect output signal having a first logical state in response to the clock frequency being below the frequency threshold and generates the clock detect output signal having a second logical state in response to the clock frequency being above the frequency threshold. The method delays the command signal by a first timing latency to generate a timing adjusted control signal where the first timing latency is one or more clock periods of the input clock signal. Finally, the method adjusts the first timing latency in response to the clock detect output signal.

Abstract: A memory device implements a memory read training method using a dedicated read command to retrieve training data from a register for performing memory read training while the memory device remains operating in the normal operation mode. Subsequent to the memory read training, the memory device may then receive the normal read command to read data from the memory cell array or the normal write command to write data to the memory cell array. In this manner, memory read training is performed simply by issuing read commands and carrying out read operations without requiring the memory device to enter and exit special memory read training mode for performing calibration.

Abstract: Calibration circuits and methods to set an on-chip impedance to match a target impedance where the reference voltage does not equal one-half of the positive power supply voltage Vddq are described. In particular, calibration circuits and methods are provided to enable accurate impedance matching at a reference voltage Vref of K*Vddq, where K is a number between 0 and 1. In some embodiments, a calibration circuit for impedance matching at a reference voltage of K*Vddq uses a ratioed current mirror. In another embodiment, a calibration circuit for impedance matching at a reference voltage of K*Vddq uses a ratioed mirror pull-up circuit. In yet another embodiment, a calibration circuit for impedance matching at a reference voltage of K*Vddq uses a ratioed target impedance.