Patents Assigned to Intel Corporation (INTEL)
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Patent number: 11128505Abstract: Methods, apparatuses, and computer readable media include an apparatus of an access point (AP) or station (STA) comprising processing circuitry configured to decode a legacy preamble of a physical layer (PHY) protocol data unit (PPDU), determine whether the legacy preamble comprises an indication that the PPDU is an extremely-high throughput (EHT) PPDU, and in response to the determination indicating the PPDU is the EHT PPDU, decode the EHT PPDU. Some embodiments determine a spatial stream resource allocation based on a row of a spatial configuration table, a row of a frequency resource unit table, a number of stations, and location of the station relative to the number of stations in user fields of an EHT-signal (SIG) field. To accommodate 16 spatial streams, some embodiments extend the length of the packet extension field, extend signaling of a number of spatial streams, and/or extend a number of EHT-SIG symbols.Type: GrantFiled: February 6, 2020Date of Patent: September 21, 2021Assignee: Intel Corporation and Intel IP CorporationInventors: Xiaogang Chen, Thomas J. Kenney, Shahrnaz Azizi, Robert J. Stacey, Laurent Cariou, Qinghua Li, Feng Jiang
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Patent number: 10735960Abstract: Methods and systems for authenticated wake-up radio frames are disclosed. In one aspect, a method includes generating a wake-up radio (WUR) integrity group key (IGTK) for authentication of WUR frames when received by a wake-up radio (WURx). The WUR IGTK may be identified via a key identifier in the WUR frame. The key identifier may be updated when the WUR IGTK is updated, facilitating WUR IGTK key updating across multiple associated stations.Type: GrantFiled: October 31, 2018Date of Patent: August 4, 2020Assignee: Intel Corporation and Intel IP CorporationInventors: Po-Kai Huang, Shahrnaz Azizi, Daniel F. Bravo, Ido Ouzieli, Emily H. Qi, Noam Ginsburg, Robert J. Stacey
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Patent number: 10547325Abstract: An embodiment of a semiconductor package apparatus may include technology to load compressed symbols in a data stream into a first content accessible memory, break a serial dependency of the compressed symbols in the compressed data stream, and decode more than one symbol per clock. Other embodiments are disclosed and claimed.Type: GrantFiled: August 16, 2018Date of Patent: January 28, 2020Assignee: Intel Corporation Intel IP CorporationInventors: Smita Kumar, Sudhir Satpathy, Chris Cunningham
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Patent number: 10390294Abstract: Embodiments of the present disclosure are directed towards devices and methods for discovering and waking up dormant access nodes in cellular networks. In one embodiment, the user equipment may be configured with information to assist in determining a discovery zone of discovery signals transmitted by cells in a network. In some embodiments, the information may include a duration of a discovery zone.Type: GrantFiled: October 20, 2017Date of Patent: August 20, 2019Assignee: Intel Corporation and Intel IP CorporationInventors: Seunghee Han, Alexei Davydov
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Patent number: 9838951Abstract: Embodiments of the present disclosure are directed towards devices and methods for discovering and waking up dormant access nodes in cellular networks. In one embodiment, the user equipment may be configured with information to assist in determining a discovery zone of discovery signals transmitted by cells in a network. In some embodiments, the information may include a duration of a discovery zone.Type: GrantFiled: December 19, 2014Date of Patent: December 5, 2017Assignee: Intel Corporation and Intel IP CorporationInventors: Seunghee Han, Alexei Davydov
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Patent number: 7517765Abstract: The present invention discloses a method for forming germanides on substrates with exposed germanium and exposed dielectric(s) topography, thereby allowing for variations in the germanide forming process. The method comprises the steps of depositing nickel on a substrate having topography, performing a first thermal step to convert substantially all deposited nickel in regions away from the topography into a germanide, selectively removing the unreacted nickel, and performing a second thermal step to lower the resistance of formed germanide.Type: GrantFiled: September 8, 2006Date of Patent: April 14, 2009Assignees: Interuniversitair Microelektronica Centrum (IMEC), Intel Corporation (INTEL), Katholieke Universiteit Leuven (KUL)Inventors: David P. Brunco, Karl Opsomer, Brice De Jaeger
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Publication number: 20070032025Abstract: The present invention discloses a method for forming germanides on substrates with exposed germanium and exposed dielectric(s) topography, thereby allowing for variations in the germanide forming process. The method comprises the steps of depositing nickel on a substrate having topography, performing a first thermal step to convert substantially all deposited nickel in regions away from the topography into a germanide, selectively removing the unreacted nickel, and performing a second thermal step to lower the resistance of formed germanide.Type: ApplicationFiled: September 8, 2006Publication date: February 8, 2007Applicants: Interuniversitair Microelektronica Centrum (IMEC), Intel Corporation (INTEL), Katholieke Universiteit Leuven (KUL)Inventors: David Brunco, Karl Opsomer, Brice De Jaeger
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Publication number: 20040209518Abstract: An inter-digital capacitor may be used in a power socket for a microelectronic device. In one embodiment an integrated, low-resistance power and ground terminal configuration is disclosed. The capacitor plates are alternatively coupled to the power and ground terminals. Two polarity types are disclosed. A method of operation is also described.Type: ApplicationFiled: May 3, 2004Publication date: October 21, 2004Applicant: Intel Corporation, Intel.Inventors: Dong Zhong, Jiangqi He, Yuan-Liang Li