Patents Assigned to Intel Corporation (INTEL)
  • Patent number: 11128505
    Abstract: Methods, apparatuses, and computer readable media include an apparatus of an access point (AP) or station (STA) comprising processing circuitry configured to decode a legacy preamble of a physical layer (PHY) protocol data unit (PPDU), determine whether the legacy preamble comprises an indication that the PPDU is an extremely-high throughput (EHT) PPDU, and in response to the determination indicating the PPDU is the EHT PPDU, decode the EHT PPDU. Some embodiments determine a spatial stream resource allocation based on a row of a spatial configuration table, a row of a frequency resource unit table, a number of stations, and location of the station relative to the number of stations in user fields of an EHT-signal (SIG) field. To accommodate 16 spatial streams, some embodiments extend the length of the packet extension field, extend signaling of a number of spatial streams, and/or extend a number of EHT-SIG symbols.
    Type: Grant
    Filed: February 6, 2020
    Date of Patent: September 21, 2021
    Assignee: Intel Corporation and Intel IP Corporation
    Inventors: Xiaogang Chen, Thomas J. Kenney, Shahrnaz Azizi, Robert J. Stacey, Laurent Cariou, Qinghua Li, Feng Jiang
  • Patent number: 10735960
    Abstract: Methods and systems for authenticated wake-up radio frames are disclosed. In one aspect, a method includes generating a wake-up radio (WUR) integrity group key (IGTK) for authentication of WUR frames when received by a wake-up radio (WURx). The WUR IGTK may be identified via a key identifier in the WUR frame. The key identifier may be updated when the WUR IGTK is updated, facilitating WUR IGTK key updating across multiple associated stations.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: August 4, 2020
    Assignee: Intel Corporation and Intel IP Corporation
    Inventors: Po-Kai Huang, Shahrnaz Azizi, Daniel F. Bravo, Ido Ouzieli, Emily H. Qi, Noam Ginsburg, Robert J. Stacey
  • Patent number: 10547325
    Abstract: An embodiment of a semiconductor package apparatus may include technology to load compressed symbols in a data stream into a first content accessible memory, break a serial dependency of the compressed symbols in the compressed data stream, and decode more than one symbol per clock. Other embodiments are disclosed and claimed.
    Type: Grant
    Filed: August 16, 2018
    Date of Patent: January 28, 2020
    Assignee: Intel Corporation Intel IP Corporation
    Inventors: Smita Kumar, Sudhir Satpathy, Chris Cunningham
  • Patent number: 10390294
    Abstract: Embodiments of the present disclosure are directed towards devices and methods for discovering and waking up dormant access nodes in cellular networks. In one embodiment, the user equipment may be configured with information to assist in determining a discovery zone of discovery signals transmitted by cells in a network. In some embodiments, the information may include a duration of a discovery zone.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: August 20, 2019
    Assignee: Intel Corporation and Intel IP Corporation
    Inventors: Seunghee Han, Alexei Davydov
  • Patent number: 9838951
    Abstract: Embodiments of the present disclosure are directed towards devices and methods for discovering and waking up dormant access nodes in cellular networks. In one embodiment, the user equipment may be configured with information to assist in determining a discovery zone of discovery signals transmitted by cells in a network. In some embodiments, the information may include a duration of a discovery zone.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: December 5, 2017
    Assignee: Intel Corporation and Intel IP Corporation
    Inventors: Seunghee Han, Alexei Davydov
  • Patent number: 7517765
    Abstract: The present invention discloses a method for forming germanides on substrates with exposed germanium and exposed dielectric(s) topography, thereby allowing for variations in the germanide forming process. The method comprises the steps of depositing nickel on a substrate having topography, performing a first thermal step to convert substantially all deposited nickel in regions away from the topography into a germanide, selectively removing the unreacted nickel, and performing a second thermal step to lower the resistance of formed germanide.
    Type: Grant
    Filed: September 8, 2006
    Date of Patent: April 14, 2009
    Assignees: Interuniversitair Microelektronica Centrum (IMEC), Intel Corporation (INTEL), Katholieke Universiteit Leuven (KUL)
    Inventors: David P. Brunco, Karl Opsomer, Brice De Jaeger
  • Publication number: 20070032025
    Abstract: The present invention discloses a method for forming germanides on substrates with exposed germanium and exposed dielectric(s) topography, thereby allowing for variations in the germanide forming process. The method comprises the steps of depositing nickel on a substrate having topography, performing a first thermal step to convert substantially all deposited nickel in regions away from the topography into a germanide, selectively removing the unreacted nickel, and performing a second thermal step to lower the resistance of formed germanide.
    Type: Application
    Filed: September 8, 2006
    Publication date: February 8, 2007
    Applicants: Interuniversitair Microelektronica Centrum (IMEC), Intel Corporation (INTEL), Katholieke Universiteit Leuven (KUL)
    Inventors: David Brunco, Karl Opsomer, Brice De Jaeger
  • Publication number: 20040209518
    Abstract: An inter-digital capacitor may be used in a power socket for a microelectronic device. In one embodiment an integrated, low-resistance power and ground terminal configuration is disclosed. The capacitor plates are alternatively coupled to the power and ground terminals. Two polarity types are disclosed. A method of operation is also described.
    Type: Application
    Filed: May 3, 2004
    Publication date: October 21, 2004
    Applicant: Intel Corporation, Intel.
    Inventors: Dong Zhong, Jiangqi He, Yuan-Liang Li