Abstract: Unidirectional self-aligned gate endcap (SAGE) architectures with gate-orthogonal walls, and methods of fabricating unidirectional self-aligned gate endcap (SAGE) architectures with gate-orthogonal walls, are described. In an example, integrated circuit structure includes a first semiconductor fin having a cut along a length of the first semiconductor fin. A second semiconductor fin has a cut along a length of the second semiconductor fin. A gate endcap isolation structure is between the first semiconductor fin and the second semiconductor fin. The gate endcap isolation structure has a substantially uniform width along the lengths of the first and second semiconductor fins.

Abstract: Provided are an apparatus, system and method for offloading data transfer operations between source and destination storage devices to a hardware accelerator. The hardware accelerator includes a memory space and control logic to receive, from a host processor, a command descriptor indicating at least one source storage device having transfer data to transfer to at least one destination storage device and a computational task to perform on the transfer data. The control logic sends read commands to the at least one source storage device to read the transfer data to at least one read buffer in the memory space and performs the computational task on the transfer data to produce modified transfer data. The control logic writes the modified transfer data to at least one write buffer in the memory space to cause the modified transfer data to be written to the at least one destination storage device.

Abstract: Pixel architectures for low power micro light-emitting diode displays are described. In an example, a micro light emitting diode pixel structure includes a substrate having a plurality of conductive interconnect structures in a first dielectric layer thereon. A plurality of micro light emitting diode devices is in a second dielectric layer above the first dielectric layer, individual ones of the plurality of micro light emitting diode devices electrically coupled to a corresponding one of the plurality of conductive interconnect structures. The plurality of micro light emitting diode devices includes an orange micro light emitting diode device, a green micro light emitting diode device, and a blue micro light emitting diode device. A transparent conducting oxide layer is disposed on the plurality of micro light emitting diode devices and on the second dielectric layer.

Abstract: Systems, apparatuses and methods may provide for a memory apparatus that includes a client-side address space dedicated to an accessor of obfuscated multi-tenant data, wherein an executable view generation library is stored to the client-side address space. In one example, the executable view generation library is to receive a request to access at least a portion of the obfuscated multi-tenant data, convert the obfuscated multi-tenant data to deobfuscated multi-tenant data based on metadata associated with the executable view generation library and generate a single-tenant view based on the deobfuscated multi-tenant data.

Abstract: Methods and apparatus for dynamically provisioning virtualized functions in a Universal Serial Bus (USB) device by means of a virtual USB hub. The virtual USB hub includes a USB upstream port configured to be connected to a host system and at least one external bus or external interface to which devices including non-USB devices or computing devices in which non-USB devices are embedded may be connected. The virtual USB hub is configured to detect the non-USB devices and/or functions performed by the non-USB devices and generate corresponding virtual USB configuration information under which virtual USB devices and/or functions are connected to downstream virtual ports in the virtual USB hub. The virtual USB configuration is presented to the host computer to enable the host computer to communicate with the non-USB devices and/or their functions.

Abstract: A method of fabricating an RF filter on a semiconductor package comprises forming a first dielectric buildup film. A second dielectric buildup film is formed over the first dielectric buildup film, the second dielectric buildup film comprising a dielectric material that contains a metallization catalyst, wherein the dielectric material comprises one of an epoxy-polymer blend dielectric material, silicon dioxide and silicon nitride, and a low-k dielectric. A trench is formed in the second dielectric buildup film with laser ablation, wherein the laser ablation selectively activates sidewalls of the trench for electroless metal deposition. A metal selectively is plated to sidewalls of the trench based at least in part on the metallization catalyst and immersion in an electroless solution. A low-loss buildup film is formed over the metal that substantially fills the trench.

Abstract: Technologies for cross-device shared web resource caching include a client device and a shared cache device. The client device scans for a shared cache device in local proximity to the client device and, in response to the scan, registers with the shared cache device. After registering, the client device requests a cached web resource from the shared cache device. The shared cache device determines whether a cached web resource that matches the request is installed in a shared cache. The shared cache device may determine whether an origin of the request matches the mi gin of the cached web resource. If installed, the shared cache device sends a found response and the cached web resource to the client device. If not installed, the shared cache device sends a not-found response and the client device may request the web resource from a remote web server. Other embodiments are described and claimed.

Abstract: A processor, including a core; and a cache-coherent memory fabric coupled to the core and having a primary cache agent (PCA) configured to provide a primary access path; and a secondary cache agent (SCA) configured to provide a secondary access path that is redundant to the primary access path, wherein the PCA has a coherency controller configured to maintain data in the secondary access path coherent with data in the main access path.

Abstract: An embodiment of a parallel processor apparatus may include a sample pattern selector to select a sample pattern for a pixel, and a sample pattern subset selector communicatively coupled to the sample pattern selector to select a first subset of the sample pattern for the pixel corresponding to a left eye display frame and to select a second subset of the sample pattern for the pixel corresponding to a right eye display frame, wherein the second subset is different from the first subset. Other embodiments are disclosed and claimed.

Abstract: Techniques are disclosed for forming integrated circuit structures having a plurality of non-planar transistors. An insulation structure is provided between channel, source, and drain regions of neighboring fins. The insulation structure is formed during back side processing, wherein at least a first portion of the isolation material between adjacent fins is recessed to expose a sub-channel portion of the semiconductor fins. A spacer material is then deposited at least on the exposed opposing sidewalls of the exposed sub-channel portion of each fin. The isolation material is then further recessed to form an air gap between gate, source, and drain regions of neighboring fins. The air gap electrically isolates the source/drain regions of one fin from the source/drain regions of an adjacent fin, and likewise isolates the gate region of the one fin from the gate region of the adjacent fin. The air gap can be filled with a dielectric material.

Abstract: Disclosed herein are embodiments related to security in cloudlet environments. In some embodiments, for example, a computing device (e.g., a cloudlet) may include: a trusted execution environment; a Basic Input/Output System (BIOS) to request a Key Encryption Key (KEK) from the trusted execution environment; and a Self-Encrypting Storage (SES) associated with the KEK; wherein the trusted execution environment is to verify the BIOS and provide the KEK to the BIOS subsequent to verification of the BIOS, and the BIOS is to provide the KEK to the SES to unlock the SES for access by the trusted execution environment.

Abstract: A method includes receiving a request for a transfer of data on a bus of a computing device; determining a direction for the transfer, at least in part based on the request; determining a quantity of data for the transfer, at least in part based on the request; determining a power state for a lane of the bus, at least in part based on the direction and the quantity of data for the transfer; and setting the power state for the lane of the bus.

Abstract: Discussed herein is gate spacing in integrated circuit (IC) structures, as well as related methods and components. For example, in some embodiments, an IC structure may include: a first gate metal having a longitudinal axis; a second gate metal, wherein the longitudinal axis of the first gate metal is aligned with a longitudinal axis of the second gate metal; a first dielectric material continuously around the first gate metal; and a second dielectric material continuously around the second gate metal, wherein the first dielectric material and the second dielectric material are present between the first gate metal and the second gate metal.

Abstract: An integrated circuit structure having a stacked transistor architecture includes a first semiconductor body (e.g., set of one or more nanoribbons) and a second semiconductor body (e.g., set of one or more nanoribbons) above the first semiconductor body. The first and second semiconductor bodies are part of the same fin structure. The distance between an upper surface of the first semiconductor body and a lower surface of the second semiconductor body is 60 nm or less. A first gate structure is on the first semiconductor body, and a second gate structure is on the second semiconductor body. An isolation structure that includes a dielectric material is between the first and second gate structures, and is on and conformal to a top surface of the first gate structure. In addition, a bottom surface of the second gate structure is on a top surface of the isolation structure, which is relatively flat.

Abstract: Disclosed is a technical solution to calibrate confidence scores of classification networks. A classification network has been trained to receive an input and output a label of the input that indicates a class of the input. The classification network also outputs a confidence score of the label, which indicates a likelihood of the input falling into the class, i.e., a confidence level of the classification network that the label is correct. To calibrate the confidence of the classification network, a logit transformation function may be added into the classification network. The logic transformation function may be an entropy-based function and have learnable parameters, which may be trained by inputting calibration samples into the classification network and optimizing a negative log likelihood based on the labels generated by the classification network and ground-truth labels of the calibration samples. The trained logic transformation function can be used to compute reliable confidence scores.

Abstract: A system comprising an accelerator circuit comprising an accelerator function unit to implement a first function, and one or more device feature header (DFH) circuits to provide attributes associated with the accelerator function unit, and a processor to retrieve the attributes of the accelerator function unit by traversing a device feature list (DFL) referencing the one or more DFH circuits, execute, based on the attributes, an application encoding the first function to cause the accelerator function unit to perform the first function.

Abstract: An example an IC package including a liner for promotion of mold adhesion includes a conductive structure on a support surface; a mold material at least partially encasing the conductive structure; and a liner on a surface of the conductive structure between the surface of the conductive structure and the mold material, wherein the liner comprises a material including silicon and nitrogen.

Abstract: A transistor structure includes a channel region including first sidewall. A gate electrode includes a first layer having a first portion adjacent to the first sidewall and a second portion adjacent to a gate electrode boundary sidewall. The gate electrode includes a second layer between the first and second portions of the first layer. The first layer has a first composition associated with a first work function material, and has a first lateral thickness from the first sidewall. The second layer has a second composition associated with a second work function material. Depending one a second lateral thickness of the second layer, the second layer may modulate a threshold voltage (VT) of the transistor structure by more or less. In some embodiments, a ratio of the second lateral thickness to the first lateral thickness is less than three.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the first microelectronic component is coupled to the second microelectronic component by interconnects, and wherein the interconnects include individual first metal contacts coupled to respective individual second metal contacts; and a void between an individual first metal contact that is not coupled to a respective individual second metal contact, wherein the void is in the first direct bonding region.