Patents Assigned to Intel Corporatuon
  • Wide bandgap group IV subfin to reduce leakage
    Patent number: 11152290
    Abstract: A subfin layer is deposited on a substrate. A fin layer is deposited on the subfin layer. The subfin layer has a conduction band energy offset relative to the fin layer to prevent a leakage in the subfin layer. In one embodiment, the subfin layer comprises a group IV semiconductor material layer that has a bandgap greater than a bandgap of the fin layer.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: October 19, 2021
    Assignee: Intel Corporatuon
    Inventors: Benjamin Chu-Kung, Van H. Le, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros, Ashish Agrawal, Seung Hoon Sung