Abstract: Semiconductor devices and systems with asymmetric source and drain contacts, and methods of forming the same, are disclosed herein. In one example, a semiconductor device includes a source, a drain, a source contact, a drain contact, a channel, and a gate. The source contact is coupled to the source and the drain contact is coupled to the drain, and the source contact and the drain contact are asymmetric. The source and the drain are coupled via the channel, and the gate is coupled to the channel.

Abstract: Methods and apparatus relating to subsystem-based System on Chip (SoC) integration are described. In one embodiment, logic circuitry determines one or more components of a subsystem. The subsystem supports an architectural feature to be implemented on a System on Chip (SoC) device. A first interface communicatively couples a first component of the subsystem to a first component of another subsystem. A second interface communicatively couples at least one component of the subsystem to at least one chassis component of the SoC device or communicatively couples the at least one component of the subsystem to at least one non-chassis component of the other subsystem. In an embodiment, components of the subsystem may be packaged such that the packaging generates a reusable collateral that allows for fast integration of all aspects of design in any SoC device with a compatible chassis prior to manufacture.

Abstract: A level shifter may be utilized in a flash memory to reduce the standby power consumption. The level shifter may be coupled so that the gate-to-source voltage of the input transistor is reduced during standby operations to reduce leakage current. At the same time, the source of the input transistor may be coupled to a lower voltage during active level shifting operations. Thus, good transistor characteristics may be achieved with reduced leakage currents.