Abstract: A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer.

Abstract: A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing a second impurity; and a gap passivation layer located between the first region and the second region on the semiconductor substrate, wherein the first conductive semiconductor layer is also on the gap passivation layer.

Abstract: A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer.

Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Abstract: At a writing time, a first transistor 412 is turned on so that a data signal Xj is supplied to one end of a capacitor 420. At this time, since a second transistor 414 is turned off, driving current does not flow to an organic light emitting diode (OLED) device 430. A power supply voltage Vdd is supplied to the other end of a capacitor through a power supply line L. However, since the driving current does not flow at the writing time, the power supply voltage Vdd is not reduced by the wiring line resistance of the power supply line L. On the other hand, at an emission time, the first transistor 412 is turned off and the second transistor 414 is turned on. Therefore, the driving current is supplied to the OLED device 430.

Abstract: At a writing time, a first transistor 412 is turned on so that a data signal Xj is supplied to one end of a capacitor 420. At this time, since a second transistor 414 is turned off, driving current does not flow to an organic light emitting diode (OLED) device 430. A power supply voltage Vdd is supplied to the other end of a capacitor through a power supply line L. However, since the driving current does not flow at the writing time, the power supply voltage Vdd is not reduced by the wiring line resistance of the power supply line L. On the other hand, at an emission time, the first transistor 412 is turned off and the second transistor 414 is turned on. Therefore, the driving current is supplied to the OLED device 430.

Abstract: A display apparatus is provided which is capable of improving display quality by expanding the light-emission area of pixels by improving the layout of pixels and common power-feed lines formed on a substrate. Pixels including a light-emission element, such as an electroluminescence element or an LED element, are arranged on both sides of common power-feed lines so that the number of common power-feed lines is reduced. Further, the polarity of a driving current flowing between the pixels and the light-emission element is inverted so that the amount of current flowing through the common power-supply lines is reduced.

Abstract: The invention provides an electro-optical device in which a voltage drop due to the wiring resistance of a cathode is reduced and therefore steady image signals are transmitted such that erroneous image display, such as low contrast, is reduced or prevented. The invention also provides an electronic apparatus including such an electro-optical device. An electro-optical device includes red, green, and blue luminescent power-supply lines to apply currents to light-emitting elements arranged in an actual display region in a matrix; and a cathode line disposed between the light-emitting elements and a cathode. The cathode line has a width larger than a width of red, green, and blue luminescent power-supply lines.