Abstract: An imaging device comprising a linear array of laser diodes that are adapted to provide an optical output comprising a plurality of spaced-apart optical beams. Focusing optics are configured to form a plurality of image points from said spaced-apart optical beams, the image points being spaced apart along a first axis. The image points have a non-uniform spacing along the first axis. By scanning the linear array along a photosensitive plate, and timing the firing of lasers accordingly, every pixel point on the photosensitive plate can be imaged by one of the image points from the laser array. Non-uniform spacing of the image points can provide advantages in heat dissipation from the laser elements, and reduction of some printing artifacts on the photosensitive plate.

Abstract: A monolithic laser array (30) has a plurality of parallel laser elements (31-1, 31-2 . . . 31-16) configured such that there is significantly reduced bond pad metallization area and drive contact metallization area between adjacent pairs of laser elements. Each laser element has a waveguide (33) extending along its optical axis, a drive contact (34) extending along at least a portion of the waveguide (33), and a bond pad area (35) extending laterally from the drive contact. The laser elements are arranged in pairs of adjacent laser elements with each laser element of a pair having its bond pad area (35) extending laterally towards the other laser element of the pair and occupying a respective portion of the substrate surface between the laser elements of the pair. The substrate surface between pairs of laser elements is thereby substantially free of bond pad metallization to form an enhanced cleave area extending over the length of the array.

Abstract: An alignment and fixing apparatus for positioning and securing an optical fibre in alignment with an optical source, in which the optical fibre is coupled, at two longitudinally separated points along the fibre, to respective ones of a pair of cantilever arms. Lateral movement of one of the cantilever arms induces a smaller lateral movement of the other cantilever arm, thereby enabling precision lateral displacement of an end of the fibre proximal to the optical source.

Abstract: A method of modulating an optical signal passing through a waveguide structure with a plurality of sections including electrically biasing one or more of the sections with a bias voltage to achieve a predetermined level of chirp, modulation depth, or insertion loss. Preferably, two or more sections are biased with a reverse bias voltage, a zero bias voltage, or forward bias voltage.

Abstract: A semiconductor laser device incorporates a beam control layer for reducing far field and beam divergence. Within the beam control layer, a physical property of the semiconductor material varies as a function of depth through, the beam control layer, by provision of a first sub-layer in which the property varies gradually from a first level to a second level, and a second sub-layer in which the property varies from said second level to a third level. In the preferred arrangement, the conduction band edge of the semiconductor has a V-shaped profile through the beam control layer.

Abstract: A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semi-conductor devices enables spatial control of the QWI process so as to achieve differing bandgap shifts across a wafer, device or substrate surface.

Abstract: A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semiconductor devices differing bandgap shifts across a wafer, device or substrate surface. The method includes: pattering the surface of a semiconductor substrate with QWI-initiating material in first regions of the surface; conducting a first thermal processing cycle on the substrate to generate a first bandgap shifts in the first regions; pattering the surface of the substrate with QWI initiating material in second regions of the surface, distinct from said first regions; and conducting a second thermal processing cycle on the substrate to generate a second bandgap shift in the second regions, and to generate a cumulative bandgap shift in the first regions, the cumulative bandgap shift being the cumulative result of said first and second thermal processing cycles. Further steps can produce additonal cumulative bandgap shifts.

Abstract: A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible.