Abstract: A method is presented for forming equal thickness gate spacers for a CMOS (complementary metal oxide semiconductor) device, the method includes forming a PFET (p-type field effect transistor) device and an NFET (n-type field effect transistor) device each including gate masks formed over dummy gates, forming PFET epi growth regions between the dummy gates of the PFET device, forming NFET epi growth regions between the dummy gates of the NFET device, depositing a nitride liner and an oxide over the PFET and NFET epi growth regions, the nitride liner and oxide extending up to the gate masks, and removing the dummy gates and the gate masks to form HKMGs (high-k metal gates) between the PFET and NFET epi growth regions.
Type:
Grant
Filed:
December 11, 2018
Date of Patent:
September 1, 2020
Assignees:
Interanational Business Machines Corporation, GLOBALFOUNDRIES Inc.
Abstract: A method and system for mapping an object and an associated handle between the object-oriented schema of an application program and the relational schema of a database in which the object is persisted. The handle is reconstructed in response to a run-time request by an application program to instantiate the object. The handle may be an independent handle or an embedded handle. The relationships afforded by primary keys and foreign keys in a legacy, i.e., existing, relational database, can be preserved by mapping them to the independent and embedded handles, respectively. The mapping is performed prior to application program run-time, and is defined in a high-level schema mapping language, which may be generated with the aid of a schema mapping software tool.
Type:
Grant
Filed:
November 26, 1997
Date of Patent:
September 21, 1999
Assignee:
Interanational Business Machines Corporation
Inventors:
Tracy Kim Burroughs, Steven John Gansemer, Wilson D. Lee, Erik E. Voldal, Cynthia Ann Rogers, Laura Jane Zaborowski