Abstract: In this invention the technology is provided for rod shaped conductor member fabrication in situ, in position, in the mass filter spatial configuration by growth through vertically repeated conduit mold formations, filling the conduit increments with to be rod material, and coalescing the growth increments as the rod length is achieved.

Abstract: Accuracy and sensitivity in the optical characterization of solids and solid materials are improved through the use of the interdependent features of: extending the photon energy range over which the metrology is performed to include a portion of the range up through 10 eV, in which, the higher photon energy of the light improves signal distinguishing ability; and providing a controlled ambient in the entire light path between the light source and a detector that prevents absorption and signal definiteness masking so as to sharpen the identifiability of the change parameters imparted into the reflected light. Combinations of specific devices and materials that for different types of ellipsometry are provided.

Abstract: Metrology for ultrathin dielectric layers of the order of less than 10 nanometers in thickness is achieved by specular ellipsometry in a totally controlled ambient between the light source and the detector, in which, a precise 2.75 through 9.0 eV photon energy range continuum of light is employed. In the signal analysis there is the taking into consideration the effect of noise in the development of the ellipsometric parameter values and in the resulting data. In the invention the precise photon energy range operates to sharpen the identifiability of the change parameters imparted into the reflected light in the ellipsometry while minimizing absorption and signal definiteness masking; and the taking into consideration of noise in the signal analysis involves providing a simulated noise spectrum for comparison with the least squares fitting algorithm-derived parameters to determine the quality of the minimum and the reliability of the inferred parameters.

Abstract: A radiated energy to electrical energy conversion device and technology is provided where there is a single absorber layer of semiconductor material. The thickness of the absorber layer is much less than had been appreciated as being useful heretofore in the art. Between opposing faces the layer is about ½ or less of the carrier diffusion length of the semiconductor material which is about 0.02 to 0.5 micrometers. The thickness of the absorber layer is selected for maximum electrical signal extraction efficiency and may also be selected to accommodate diffusion length damage over time by external radiation.

Abstract: A radiated energy to electrical energy conversion device and technology is provided where there is a single absorber layer of semiconductor material. The thickness of the absorber layer is much less than had been appreciated as being useful heretofore in the art. Between opposing faces the layer is about 1/2 or less of the carrier diffusion length of the semiconductor material which is about 0.02 to 0.5 micrometers. The thickness of the absorber layer is selected for maximum electrical signal extraction efficiency and may also be selected to accommodate diffusion length damage over time by external radiation.