Abstract: Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate comprising a GeOx layer formed thereon having a first thickness, removing a portion of the GeOx layer by exposing the semiconductor substrate to a hydrogen-plasma dry etch so as to reduce the first thickness of the GeOx layer to a second thickness, and depositing a high-k material over the GeOx layer of the semiconductor substrate.

Abstract: Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate comprising a GeOx layer formed thereon and exposing the semiconductor substrate to first and second atomic layer deposition (ALD) processes. The first ALD process includes exposing the semiconductor substrate to a first gaseous precursor comprising aluminum and exposing the semiconductor substrate to a second gaseous precursor comprising a first oxygen-containing precursor. The second ALD process includes exposing the semiconductor substrate to a first gaseous precursor comprising aluminum and exposing the semiconductor substrate to a second gaseous precursor comprising a second oxygen-containing precursor.

Abstract: Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.

Abstract: Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.