Abstract: A charge amplifying memory cell and its memory of making based on trench technology. A trench is formed which reaches through an n-type well region to a p.sup.+ -type substrate. A triple layer is formed on two sidewalls of the trench consisting of two capacitive insulating layers and a intermediate p.sup.+ polysilicon layer. The trench is then at least partially filled with a conductor, such as polysilicon, facing the triple layer. Thereby, the intermediate polysilicon layer acts as a charge storage node with capacitance to both the substrate and the polysilicon filling the trench. The insulating layer facing the well is opened with a contact hole near its top so that a p.sup.+ transistor drain is formed in the adjacent well by diffusion from the polysilicon through the contact hole. A p.sup.+ transistor source is doped into the well with a gate region between it and the drain to provide a write transistor.

Abstract: The initiation of the flyback interval of a variable format CRT display system is controlled by a frequency independent closed loop compensation circuit. The termination point of a sawtooth pulse, which is initiated at the start of the horizontal sync for the CRT display system, determines the point for the initiation of the flyback interval. The termination point of the sawtooth is compared with the center of the flyback interval. So long as the flyback pulse is perfectly centered on the termination point, the timing is proper. However, if it is off-centered, circuitry results in delaying or advancing the turning off of the horizontal yoke driver to modify the initiation of the flyback interval in a manner to compensate for the change in delay.