Abstract: In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising:
Type:
Application
Filed:
July 31, 2002
Publication date:
February 5, 2004
Applicants:
Infineon Technologies North America Corp., International Business Machines Corporation or ITR, LP; IT AG; UMC, etc.
Inventors:
Roy C. Iggulden, Padraic Shafer, Kwong Hon Wong, Michael M. Iwatake, Jay W. Strane, Thomas Goebel, Donna D. Miura, Chet Dziobkowski, Wemer Robl, Brian Hughes