Abstract: A process for the fabrication of a MOSgated device that includes a plurality of spaced trenches in the termination region thereof.

Abstract: A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction.

Abstract: A hybrid device including a silicon based MOSFET operatively connected with a GaN based device.

Abstract: A Class D amplifier circuit in accordance with an embodiment of the present application includes a converter stage operable to provide a desired AC voltage and a Class D amplifier stage, connected to the converter stage. The Class D amplifier stage includes a first bi-directional switch connected to the converter stage, a second bi-directional switch, connected in series with the first bi-directional switch, wherein the first and second bi-directional switches are connected across the desired AC voltage provided by the converter stage and a controller operable to turn the first and second bi-directional switches ON and OFF such that a desired voltage is provided at a midpoint node positioned between the first bi-directional switch and the second bi-directional switch.

Abstract: An end of life (EOL) detection circuit for a gas discharge lamp. The circuit includes a comparator for comparing an input voltage to first and second threshold voltages and providing an EOL signal; a sensing circuit for sensing a DC offset in the lamp-voltage during the EOL of the lamp; and a reference voltage setting circuit responsive to the DC offset including a reference diode for setting an adjustable reference voltage as said input voltage to the comparator.

Abstract: An integrated ground fault detection circuit in accordance with an embodiment of the present application includes a shunt resistor provided on a positive rail of a DC bus, a high voltage pocket including a sensory circuit connected to the shunt resistor and operable to detect a fault condition indicating a short circuit and a transmitter section operable to continuously transmit a fault condition signal indicating the fault condition and a low voltage pocket including a receiver operable to receive the fault condition signal from the sensory circuit and a logic unit, connected to the receiver, and operable to provide a fault output signal indicating the presence of a fault condition based on the fault condition signal.

Abstract: A high voltage switching circuit includes first and second group III-V transistors, the second group III-V transistor having a greater breakdown voltage than the first group III-V transistor. The circuit further includes a silicon diode in a parallel arrangement with the first group III-V transistor, the parallel arrangement being in cascade with the second group III-V transistor. The circuit is effectively a three-terminal device, where a first terminal is coupled to a gate of the second III-V transistor, a source of the first III-V transistor, and an anode of the silicon diode. A second terminal is coupled to a gate of the first group III-V transistor, and a third terminal is coupled to a drain of the second group III-V transistor. The first group III-V transistor might be an enhancement mode transistor. The second group III-V transistor might be a depletion mode transistor. The first and second group III-V transistors can be GaN HEMTs.

Abstract: Disclosed is a monolithically integrated silicon and group III-V device that includes a group III-V transistor formed in a III-V semiconductor body disposed over a silicon substrate. At least one via extends through the III-V semiconductor body to couple at least one terminal of the group III-V transistor to a silicon device formed in the silicon substrate. The silicon device can be a Schottky diode, and the group III-V transistor can be a GaN HEMT. In one embodiment an anode of the Schottky diode is formed in the silicon substrate. In another embodiment, the anode of the Schottky diode is formed in a lightly doped epitaxial silicon layer atop the silicon substrate. In one embodiment a parallel combination of the Schottky diode and the group III-V transistor is formed, while in another embodiment is series combination is formed.

Abstract: Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson.

Abstract: A process for fabrication of a semiconductor device that includes forming a first trench in a semiconductor body, forming spaced spacers in the first trench, and forming a narrower second trench at the bottom of the first trench using the spacers as a mask.

Abstract: A multichip module defining a dc to dc converter employs a monolithic chip containing at least two III-nitride switches (a monolithic CSC chip) mounted on a conductive lead frame. The CSC chip is copacked with an IC driver for the switches and with the necessary passives. The module defines a buck converter; a boost converter, a buck boost converter, a forward converter and a flyback converter. The drain, source and gate pads of the monolithic CSC chip are connected to a lead frame by solder or epoxy or by bumping attach and a conductive connector or wire bonds connect the switch terminal to lead frame.

Abstract: An accumulation mode FET (ACCUFET) having a source contact that makes Schottky contact with the base region thereof.

Abstract: A high voltage durability III-nitride semiconductor device comprises a support substrate including a first silicon body, an insulator body over the first silicon body, and a second silicon body over the insulator body. The high voltage durability III-nitride semiconductor device further comprises a III-nitride semiconductor body characterized by a majority charge carrier conductivity type, formed over the second silicon body. The second silicon body has a conductivity type opposite the majority charge carrier conductivity type. In one embodiment, the high voltage durability III-nitride semiconductor device is a high electron mobility transistor (HEMT) comprising a support substrate including a <100> silicon layer, an insulator layer over the <100> silicon layer, and a P type conductivity <111> silicon layer over the insulator layer.

Abstract: Some exemplary embodiments of a direct contact leadless package and related structure and method, especially suitable for packaging high current semiconductor devices, have been disclosed. One exemplary structure comprises a first contact lead frame portion, a paddle portion, and an extended contact lead frame portion held together by a mold compound. A first semiconductor device is attached to a top side of the paddle portion and is enclosed by said mold compound, while a second semiconductor device is attached to a bottom side of said paddle portion and is in electrical contact with said the first semiconductor device. The extended contact lead frame portion is in direct electrical contact with the second semiconductor device without using a bond wire. Alternative exemplary embodiments may include additional extended lead frame portions, paddle portions, and semiconductor devices in various configurations.

Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Abstract: A GaN die having a plurality of parallel alternating and closely spaced source and drain strips is contacted by parallel coplanar comb-shaped fingers of source and drain pads. A plurality of enlarged area coplanar spaced gate pads having respective fingers contacting the gate contact of the die. The pads may be elements of a lead frame, or conductive areas on an insulation substrate. Other semiconductor die can be mounted on the pads and connected in predetermined circuit arrangements with the GaN die.

Abstract: A multiphase converter comprising a plurality of converter circuits, each converter circuit having series connected high and low side switches connected across a voltage bus with a common node provided therebetween, each of the common nodes connected through a respective inductor to an output node of the converter coupled to a load, the high and low side switches each being controlled by a control circuit to provide a desired output voltage at the output node, the control circuit including a first circuit for disabling and enabling at least one phase in response to a condition of the load, the circuit causing the high side switch to be turned on prior to the lower side switch when a disabled phase is enabled.

Abstract: According to one configuration, a monitor circuit monitors a delivery of power supplied by one or more switch devices to a dynamic load. Based on an amount of power delivered to the load as measured by the monitor circuit, a control circuit produces a voltage control signal. A gate bias voltage generator circuit utilizes the voltage control signal to generate a switch activation voltage or bias voltage. A switch drive circuit uses the switch activation voltage as generated by the bias voltage generator to activate each of the one or more switch devices during a portion of a switching cycle when a respective switch device is in an ON state, and the respective switch device conducts current from a voltage source through the switch device to the load. The control circuit adjusts the voltage control signal to modify a level of the switch activation voltage depending on the dynamic load.

Abstract: A circuit to control an AC lamp current provided by an input AC voltage supply to a cold-cathode fluorescent lamp (CCFL). The circuit includes a capacitor connected in series between the AC voltage supply and one terminal of the CCFL, the capacitor biasing the CCFL with the AC lamp current; a switch having first, second, and control terminals, the first terminal being connected to the CCFL and the second terminal being connected to the other side of the supply; a diode connected in parallel to the switch; and a resistor connected in parallel to the diode, wherein the AC lamp current is controlled by controlling the switch to add and remove resistance in series with the CCFL.

Abstract: A multi-chip module (MCM) provides power circuitry on a computer motherboard in a package of reduced size without sacrificing performance. The MCM co-packages essential power circuit components on a ball grid array (BGA) substrate. Two power MOSFETs disposed on the BGA substrate are connected in a half-bridge arrangement between an input voltage and ground. A MOSFET gate driver is electrically connected to respective gate inputs of the two power MOSFETs for alternately switching the power MOSFETs to generate an alternating output voltage at a common output node between the power MOSFETs. At least one Schottky diode is disposed on the BGA substrate and connected between the common output node and ground to minimize losses during deadtime conduction periods. The input capacitor of the circuit is contained within the MCM housing and is located close to the MOSFETs, reducing stray inductance in the circuit. The MCM package is thin and has dimensions of about 1 cm by 1 cm or less.